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A Studey of Silicon Dioxide Deposited by Liquid Phase Deposition Method on CuInSe2 and CuGaSe2

In this paper, we use a room temperature processing system, Liquid Phase Deposition(LPD) method, to grow silicon dioxide. The advantages are cheap equipment, low temperature growth, and no thermal stress. The quality is good enough to be used in IC devices. To inverstigate the properties of silicon Dioxide, we have done different physical and chemical test, including AES,TEM,FTIR,P-etch rate. We used the high frequency C-V curve to study the interface properties. The leakage current help to clarify the film quality. Moreover, we also discuss the growth mechanism in order to more understanding of LPD method.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0801100-153109
Date01 August 2000
CreatorsChen, Chien-An
ContributorsHsieh, K. Y., Mau-Phon Houng, Huang, Huey-Liang, Bae-Heng Tseng
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0801100-153109
Rightsunrestricted, Copyright information available at source archive

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