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Investigation of Copper Out-Plating Mechanism on Silicon Wafer Surface

As the miniaturization keeps decreasing in semiconductor device fabrication, metal contamination on silicon surfaces becomes critical. An investigation of the fundamental mechanism of metal contamination process on silicon surface is therefore important. Kinetics and thermodynamics of the copper out-plating process on silicon surfaces in diluted HF solutions are both evaluated by several analytical methods.

Identiferoai:union.ndltd.org:unt.edu/info:ark/67531/metadc278367
Date08 1900
CreatorsChien, Hsu-Yueh
ContributorsChyan, Oliver Ming-Ren, Acree, William E. (William Eugene)
PublisherUniversity of North Texas
Source SetsUniversity of North Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis or Dissertation
Formatvii, 77 leaves: ill., Text
RightsPublic, Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved., Chien, Hsu-Yueh

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