The emergence of wide-bandgap-based (WBG) devices, such as silicon carbide (SiC) and gallium nitride (GaN), have unveiled unprecedented opportunities, enabling the realization of superior power conversion systems. Among the potential areas of advancement are medium-voltage (MV) and high-voltage (HV) applications, due to the growing demand for high-power-density and high-efficiency power electronics converters. These advancements have propelled a wide adoption of electric vehicles (EV), which in the future will require great improvements in the charging time of these vehicles. Thereby, this thesis attempts to address such a challenge and bring about technological improvements, enabling faster, more efficient, and more effective ways of charging an electric vehicle through the application of MV 3.3 kV SiC MOSFETs. The current fast-charging solution involves heavy and bulky MV-LV transformers, which add installation complexity for EV charging stations. However, this thesis presents an alternative power-delivery solution utilizing an MV dual-active-bridge (DAB) converter. The proposed architecture is designed to directly interface with the MV grid for high-power, fast-charging capabilities while eliminating the need for an installation of the MV-LV transformer. The MV DAB converter utilizes 3.3 kV SiC MOSFETs to realize the next 800 V EV charging system, along with an extended zero-voltage-switching (ZVS) scheme, in order to provide an efficient charging strategy across a wide range of battery voltage levels. Lastly, a detailed design comparison analysis of an MV Flyback converter, targeted for the auxiliary power supply for the proposed MV EV charging architecture, is presented. / The field of power electronics, which controls and manages the conversion of electrical energy, is an important topic of discussion, as new technologies like electric vehicles (EV) are quickly emerging and disrupting the current status-quo of vehicle-choice. In order to promote timely and extensive adoption of such an enabling EV technology, it is critical to understand the current challenges involving EV charging stations and seek out opportunities to engender future innovations. Indeed, wide-bandgap (WBG) devices, such as silicon carbide (SiC) and gallium nitride (GaN), have unveiled unprecedented opportunities in enabling the realization of superior power conversion systems. Thus, utilizing these WGB devices in EV charging applications can bring about improved design and development of EV fast chargers that are faster-charging, more efficient, and more effective. Hence, this thesis presents an opportunity in EV charging station applications with the utilization of medium-voltage SiC MOSFETs. Because the current fast-charging solution involves a heavy and bulky transformer, it adds installation complexity for EV charging stations. However, this thesis presents an alternative power-delivery solution that could potentially provide an efficient and fast-charging mechanism of EVs while reducing the size of EV chargers. All things considered, this thesis provides in-depth evaluation-studies of medium-voltage 3.3 kV SiC MOSFET-based power converters, targeted for future fast EV charging applications. The development and design of the hardware prototype is presented in this thesis, along with testing and verification of experimental results.
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/93976 |
| Date | 05 August 2019 |
| Creators | Gill, Lee |
| Contributors | Electrical and Computer Engineering, Dong, Dong, Burgos, Rolando, Centeno, Virgilio A. |
| Publisher | Virginia Tech |
| Source Sets | Virginia Tech Theses and Dissertation |
| Language | English |
| Detected Language | English |
| Type | Thesis |
| Format | ETD, application/pdf |
| Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
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