Medium-voltage (MV) motor drives have found widespread applications in various heavy industries, such as in the oil and gas sectors, production plants, and process industries. Conventional cascaded H-bridge (CHB) multilevel inverters dominate the medium-voltage industrial drives domain due to their modularity, scalability, and reliability. The most prevalent CHB topology in the drive industry is based on the diodes-front-end (DFE) rectifier, which greatly limits the industrial application of the conventional CHB drives where the ability of handling regeneration is required. The main objective of this thesis is to develop a low-cost, high performance, reliable regenerative CHB drive. The thesis is concentrating on reducing the grid-tied filter size, shrinking the DC-link capacitors, improving the system’s performance and reliability through advanced control techniques. First, to reduce the number of passive filter components, a new sideband harmonic active filtering strategy based on the carrier-shifting method is proposed for regenerative CHB drives. This proposed approach extends the carrier shifted PWM method for regenerative CHB drives to further reduce the required passive filter size significantly and thus improves the overall size, cost, and efficiency while complying with IEEE Std 519-2014 grid standard. Second, a novel voltage ripple controller is proposed to reduce the dc-link capacitance in the three-phase regenerative CHB drive without adding extra measurements. Third, to achieve a faster dynamic response and the multi-objective performance during the control of CHB drives, a novel high-performance predictive control with long prediction horizons is proposed to improve the control performance of the CHB multilevel inverters. The formulation of the proposed high-performance finite control set model predictive control (FCS-MPC) is explained in detail and analyzed to reduce the real-time computation burden. Last, when a fault is detected in the regenerative CHB drive system, the reliability and fault-tolerant ability are considered as the main issues. To improve the drive system reliability, a non-symmetrical selective harmonic elimination (SHE) formulation is proposed to extend the output voltage range with a good harmonic profile under post-fault conditions. Experimental validation of the proposed algorithms is presented for the operation of a scaled-down seven-level regenerative CHB drive system. These proposed techniques make the regenerative CHB drive a promising solution for future medium-voltage regenerative drive applications in terms of cost, performance, and reliability. / Thesis / Doctor of Philosophy (PhD)

The emergence of wide-bandgap-based (WBG) devices, such as silicon carbide (SiC) and gallium nitride (GaN), have unveiled unprecedented opportunities, enabling the realization of superior power conversion systems. Among the potential areas of advancement are medium-voltage (MV) and high-voltage (HV) applications, due to the growing demand for high-power-density and high-efficiency power electronics converters. These advancements have propelled a wide adoption of electric vehicles (EV), which in the future will require great improvements in the charging time of these vehicles. Thereby, this thesis attempts to address such a challenge and bring about technological improvements, enabling faster, more efficient, and more effective ways of charging an electric vehicle through the application of MV 3.3 kV SiC MOSFETs. The current fast-charging solution involves heavy and bulky MV-LV transformers, which add installation complexity for EV charging stations. However, this thesis presents an alternative power-delivery solution utilizing an MV dual-active-bridge (DAB) converter. The proposed architecture is designed to directly interface with the MV grid for high-power, fast-charging capabilities while eliminating the need for an installation of the MV-LV transformer. The MV DAB converter utilizes 3.3 kV SiC MOSFETs to realize the next 800 V EV charging system, along with an extended zero-voltage-switching (ZVS) scheme, in order to provide an efficient charging strategy across a wide range of battery voltage levels. Lastly, a detailed design comparison analysis of an MV Flyback converter, targeted for the auxiliary power supply for the proposed MV EV charging architecture, is presented. / The field of power electronics, which controls and manages the conversion of electrical energy, is an important topic of discussion, as new technologies like electric vehicles (EV) are quickly emerging and disrupting the current status-quo of vehicle-choice. In order to promote timely and extensive adoption of such an enabling EV technology, it is critical to understand the current challenges involving EV charging stations and seek out opportunities to engender future innovations. Indeed, wide-bandgap (WBG) devices, such as silicon carbide (SiC) and gallium nitride (GaN), have unveiled unprecedented opportunities in enabling the realization of superior power conversion systems. Thus, utilizing these WGB devices in EV charging applications can bring about improved design and development of EV fast chargers that are faster-charging, more efficient, and more effective. Hence, this thesis presents an opportunity in EV charging station applications with the utilization of medium-voltage SiC MOSFETs. Because the current fast-charging solution involves a heavy and bulky transformer, it adds installation complexity for EV charging stations. However, this thesis presents an alternative power-delivery solution that could potentially provide an efficient and fast-charging mechanism of EVs while reducing the size of EV chargers. All things considered, this thesis provides in-depth evaluation-studies of medium-voltage 3.3 kV SiC MOSFET-based power converters, targeted for future fast EV charging applications. The development and design of the hardware prototype is presented in this thesis, along with testing and verification of experimental results.

El món de les comunicacions per la xarxa elèctrica (CXE) pot ser dividit en tres grans tipus: CXE en baix voltatge (CXE-BV), en mig voltatge (CXE-MV) i en alt voltatge (CXE-AV). En aquests últims anys, les CXE-BV han atret una gran expectació, ja que les seves capacitats han fet d'aquesta tecnologia una bona opció com alternativa pel bucle local d'accés i pel desplegament de xarxes d'àrea local, focalitzades aquestes últimes en l'entorn domèstic. A més, les CXE-BV inclouen un conjunt d'aplicacions de baixa velocitat orientades a l'operador, com la lectura automàtica de comptadors (LAC), distribució de càrrega, facturació dinàmica, etc. Per altra banda, les CXE-MV i CXE-AV, històricament lligades a tasques de telecontrol i teleprotecció, s'estan començant a considerar com un canal de comunicacions eficient i fiable. El desenvolupament de sistemes digitals i els esforços d'estandardització estan fent d'aquests canals un medi atractiu per a que els operadors elèctrics ofereixin serveis de comunicacions, ja que no necessiten invertir en infraestructura perquè la xarxa elèctrica ja està desplegada.En aquesta Tesi s'introduiran i es comentaran les particularitats de les tres xarxes elèctriques, després, es mostraran al lector les solucions tecnològiques existents pels canals de BV basats en la norma Europea CENELEC així com pels canals d'AV, mostrant que els sistemes actuals de LAC ofereixen una diversitat freqüencial molt baixa i que els mòdems CXE-AV estan ancorats en estendards antiquats.Aquest treball es mou per les tres topologies de la xarxa, particularment, en aplicacions orientades a la banda CENELEC, en mesura i modelat de canal, i en mesura i disseny del nivell físic per sistemes CXE-BV, CXE-MV i CXE-AV respectivament. Els sistemes actuals que exploten la banda CENELEC ofereixen mecanismes d'explotació de la diversitat freqüencial del canal molt limitats o nuls, donant lloc a una baixa robustesa en front a interferències i soroll de fons acolorit. Aquest treball proposa un esquema de modulació multiportadora que, mantenint una complexitat baixa, ofereix unes altes prestacions permetent un bon nivell d'explotació de la selectivitat freqüencial. Per al que a CXE-MV respecta, aquesta Tesi desenvolupa un model de canal determinístic-estadístic pels anells urbans de distribució de potència i, finalment, en sistemes CXE-AV, aquest treball proposa, basat en mesures de canal i proves de camp, un nivell físic de banda ampla capaç de incrementar la velocitat de comunicació mentre manté una baixa densitat espectral de potència limitant així la interferència a altres sistemes.PARAULES CLAU: Power line communications (PLC), low voltage (LV), medium voltage (MV), high voltage (HV), automatic meter reading (AMR), orthogonal frequency division multiplexing (OFDM), multicarrier spread spectrum (MC-SS), communication system design, channel measurements, channel modeling, scattering parameters. / El mundo de las comunicaciones por la red eléctrica (CRE) puede ser dividido en tres grandes tipos: CRE en bajo voltaje (CRE-BV), en medio voltaje (CRE-MV) y en alto voltaje (CRE-AV). En estos últimos años, las CRE-BV han atraído una gran expectación, ya que sus capacidades han hecho de esta tecnología una buena opción como alternativa para el bucle local de acceso y para el despliegue de redes de área local, focalizadas estas últimas en el entorno doméstico. Además, las CRE-BV incluyen un conjunto de aplicaciones de baja velocidad orientadas al operador como la lectura automática de contadores (LAC), distribución de carga, facturación dinámica, etc. Por otro lado, las CRE-MV y CRE-AV, históricamente ligadas a tareas de telecontrol y teleprotección, se están empezando a considerar como un canal de comunicaciones eficiente y fiable. El desarrollo de sistemas digitales y los esfuerzos de estandarización están haciendo de estos canales un medio atractivo para que los operadores eléctricos ofrezcan servicios de comunicaciones, ya que no necesitan invertir en infraestructura porque la red eléctrica ya está desplegada.En esta Tesis se introducirán y se comentarán las particularidades de las tres redes eléctricas, luego, se mostrarán al lector las soluciones tecnológicas existentes para los canales de BV basados en la norma Europea CENELEC así como para los canales de AV, mostrando que los sistemas actuales de LAC ofrecen una diversidad frecuencial muy baja y que los módems CRE-AV están anclados en estándares anticuados.Este trabajo se mueve por las tres topologías de red, particularmente, en aplicaciones orientadas a la banda CENELEC, en medida y modelado de canal, y en medida y diseño del nivel físico para sistemas CRE-BV, CRE-MV y CRE-AV respectivamente. Los sistemas actuales que explotan la banda CENELEC ofrecen mecanismos de explotación de la diversidad frecuencial del canal muy limitados o nulos, dando lugar a una escasa robustez frente a interferencias y ruido de fondo coloreado. Este trabajo propone un esquema de modulación multiportadora que, manteniendo una complejidad baja, ofrece unas altas prestaciones permitiendo un buen nivel de explotación de la selectividad frecuencial. Por lo que a CRE-MV respecta, esta Tesis desarrolla un modelo de canal determinístico-estadístico para los anillos urbanos de distribución de potencia y, finalmente, en sistemas de CRE-AV, este trabajo propone, basado en medidas de canal y pruebas de campo, un nivel físico de banda ancha capaz de incrementar la velocidad de comunicación mientras mantiene una baja densidad espectral de potencia limitando así la interferencia a otros sistemas.PALABRAS CLAVE: Power line communications (PLC), low voltage (LV), medium voltage (MV), high voltage (HV), automatic meter reading (AMR), orthogonal frequency division multiplexing (OFDM), multicarrier spread spectrum (MC-SS), communication system design, channel measurements, channel modeling, scattering parameters. / The world of Power line communications (PLC) can be divided into three main types: low voltage PLC (LV-PLC), medium voltage PLC (MV-PLC) and high voltage PLC (HV-PLC). These last years, LV-PLC has attracted a great expectation since its wideband capabilities has made this technology a suitable choice for last-mile access and in-home communications. Moreover, LV-PLC also includes a utility oriented low frequency and low speed applications, such as automatic meter reading (AMR), load distribution, dynamic billing and so on. On the other hand, MV-PLC and HV-PLC, historically oriented to teleprotection and telecontrol tasks, are being considered as a reliable communication channel. The development of digital equipment and the standardization efforts are making those channels an attractive medium for electrical utilities telecommunications services, since the network, as well as in LV-PLC, is already deployed. In this PhD dissertation, the three different PLC topologies are reviewed and the different communications techniques in such channels exposed. Then, a deep technological review of existing AMR solutions for the European CENELEC band, as well as HV-PLC systems is given, showing that existing AMR systems deliver low frequency diversity and HV-PLC systems are anchored in old fashioned standards.This work walks around the three topologies, specifically, CENELEC band utility oriented applications, channel measurement and modeling and channel measurement and physical layer design, regarding LV-PLC, MV-PLC and HV-PLC respectively. Existing CENELEC compliant systems deliver low or none frequency diversity mechanisms, yielding in a low robustness against colored noise and interference. This work propose a multicarrier based physical layer approach that, while keeping the complexity low, delivers high performance allowing a great level of frequency diversity. Focusing on MV-PLC, a hybrid deterministic-statistical channel model for urban underground rings is developed and, finally, in HV-PLC systems, this work proposes, based on measurements and field tests, a wideband physical layer in order to increase data rate while keeping low both the power spectral density and possible interference to other systems.KEYWORDS: Power line communications (PLC), low voltage (LV), medium voltage (MV), high voltage (HV), automatic meter reading (AMR), orthogonal frequency division multiplexing (OFDM), multicarrier spread spectrum (MC-SS), communication system design, channel measurements, channel modeling, scattering parameters.

Les procédés bipolaires semi-conducteurs complémentaires à oxyde de métal (BiCMOS) peuvent être considérés comme étant la solution la plus généralepour les produits RF car ils combinent la fabrication sophistiquée du CMOSavec la vitesse et les capacités de conduction des transistors bipolaires silicium germanium(SiGe) à hétérojonction (HBT). Les HBTs, réciproquement, sontles principaux concurrents pour combler partiellement l'écart de térahertzqui décrit la plage dans laquelle les fréquences générées par les transistors etles lasers ne se chevauchent pas (environ 0.3 THz à 30 THz). A_n d'évaluerles capacités de ces dispositifs futurs, une méthodologie de prévision fiable estsouhaitable. L'utilisation d'un ensemble hétérogène d'outils et de méthodes desimulations permet d'atteindre successivement cet objectif et est avantageusepour la résolution des problèmes. Plusieurs domaines scientifiques sont combinés, tel que la technologie de conception assistée par ordinateur (TCAO),la modélisation compacte et l'extraction des paramètres.Afin de créer une base pour l'environnement de simulation et d'améliorerla confirmabilité pour les lecteurs, les modèles de matériaux utilisés pour lesapproches hydrodynamiques et de diffusion par conduction sont introduits dèsle début de la thèse. Les modèles physiques sont principalement fondés surdes données de la littérature basées sur simulations Monte Carlo (MC) ou dessimulations déterministes de l'équation de transport de Boltzmann (BTE).Néanmoins, le module de TCAO doit être aussi étalonné sur les données demesure pour une prévision fiable des performances des HBTs. L'approchecorrespondante d'étalonnage est basée sur les mesures d'une technologie depointe de HBT SiGe pour laquelle un ensemble de paramètres spécifiques àla technologie du modèle compact HICUM/L2 est extrait pour les versionsdu transistor à haute vitesse, moyenne et haute tension. En s'aidant de cesrésultats, les caractéristiques du transistor unidimensionnel qui sont généréesservent de référence pour le profil de dopage et l'étalonnage du modèle. Enélaborant des comparaisons entre les données de références basées sur les mesureset les simulations, la thèse fait progresser l'état actuel des prévisionsbasées sur la technologie CAO et démontre la faisabilité de l'approche.Enfin, une technologie future de 28nm performante est prédite en appliquantla méthodologie hétérogène. Sur la base des résultats de TCAO, leslimites de la technologie sont soulignées. / Bipolar complementary metal-oxide-semiconductor (BiCMOS) processescan be considered as the most general solution for RF products, as theycombine the mature manufacturing tools of CMOS with the speed and drivecapabilities of silicon-germanium (SiGe) heterojunction bipolar transistors(HBTs). HBTs in turn are major contenders for partially filling the terahertzgap, which describes the range in which the frequencies generated bytransistors and lasers do not overlap (approximately 0.3THz to 30 THz). Toevaluate the capabilities of such future devices, a reliable prediction methodologyis desirable. Using a heterogeneous set of simulation tools and approachesallows to achieve this goal successively and is beneficial for troubleshooting.Various scientific fields are combined, such as technology computer-aided design(TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility,the used material models of the hydrodynamic and drift-diffusionapproaches are introduced in the beginning of this thesis. The physical modelsare mainly based on literature data of Monte Carlo (MC) or deterministicsimulations of the Boltzmann transport equation (BTE). However, the TCADdeck must be calibrated on measurement data too for a reliable performanceprediction of HBTs. The corresponding calibration approach is based onmeasurements of an advanced SiGe HBT technology for which a technology specific parameter set of the HICUM/L2 compact model is extracted for thehigh-speed, medium-voltage and high-voltage transistor versions. With thehelp of the results, one-dimensional transistor characteristics are generatedthat serve as reference for the doping profile and model calibration. By performingelaborate comparisons between measurement-based reference dataand simulations, the thesis advances the state-of-the-art of TCAD-based predictionsand proofs the feasibility of the approach.Finally, the performance of a future technology in 28nm is predicted byapplying the heterogeneous methodology. On the basis of the TCAD results,bottlenecks of the technology are identified. / Bipolare komplementäre Metall-Oxid-Halbleiter (BiCMOS) Prozesse bietenhervorragende Rahmenbedingungen um Hochfrequenzanwendungen zurealisieren, da sie die fortschrittliche Fertigungstechnik von CMOS mit derGeschwindigkeit und Treiberleistung von Silizium-Germanium (SiGe) Heterostruktur-Bipolartransistoren (HBTs) verknüpfen. Zudem sind HBTs bedeutendeWettbewerber für die teilweise Überbrückung der Terahertz-Lücke, derFrequenzbereich zwischen Transistoren (< 0.3 THz) und Lasern (> 30 THz).Um die Leistungsfähigkeit solcher zukünftigen Bauelemente zu bewerten, isteine zuverlässige Methodologie zur Vorhersage notwendig. Die Verwendungeiner heterogenen Zusammenstellung von Simulationstools und Lösungsansätzenerlaubt es dieses Ziel schrittweise zu erreichen und erleichtert die Fehler-_ndung. Verschiedene wissenschaftliche Bereiche werden kombiniert, wie zumBeispiel der rechnergestützte Entwurf für Technologie (TCAD), die Kompaktmodellierungund Parameterextraktion.Die verwendeten Modelle des hydrodynamischen Simulationsansatzes werdenzu Beginn der Arbeit vorgestellt, um die Simulationseinstellung zu erläuternund somit die Nachvollziehbarkeit für den Leser zu verbessern. Die physikalischenModelle basieren hauptsächlich auf Literaturdaten von Monte Carlo(MC) oder deterministischen Simulationen der Boltzmann-Transportgleichung(BTE). Für eine zuverlässige Vorhersage der Eigenschaften von HBTs muss dieTCAD Kon_guration jedoch zusätzlich auf der Grundlage von Messdaten kalibriertwerden. Der zugehörige Ansatz zur Kalibrierung beruht auf Messungeneiner fortschrittlichen SiGe HBT Technologie, für welche ein technologiespezifischer HICUM/L2 Parametersatz für die high-speed, medium-voltage undhigh-voltage Transistoren extrahiert wird. Mit diesen Ergebnissen werden eindimensionaleTransistorcharakteristiken generiert, die als Referenzdaten fürdie Kalibrierung von Dotierungspro_len und physikalischer Modelle genutztwerden. Der ausführliche Vergleich dieser Referenz- und Messdaten mit Simulationengeht über den Stand der Technik TCAD-basierender Vorhersagenhinaus und weist die Machbarkeit des heterogenen Ansatzes nach.Schlieÿlich wird die Leistungsfähigkeit einer zukünftigen Technologie in28nm unter Anwendung der heterogenen Methodik vorhergesagt. Anhand derTCAD Ergebnisse wird auf Engpässe der Technologie hingewiesen.