We have investigated the impact of strain on the incorporation and the properties of extended and
point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level
transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y2,
previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile
strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in
relaxed or compressively strained thin films. Furthermore a structural defect E3′ can be detected
via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown
that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31192 |
| Date | 09 August 2018 |
| Creators | Schmidt, Florian, Müller, Stefan, von Wenckstern, Holger, Benndorf, Gabriele, Pickenhain, Rainer, Grundmann, Marius |
| Publisher | American Institute of Physics, Universität Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0021-8979, 1089-7550, 103703 |
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