The low frequency noise of metal-semiconductor field-effect transistors (MESFETs) based on
ZnO:Mg thin films grown by pulsed laser deposition on a-plane sapphire was investigated. In order
to distinguish between noise generation in the bulk channel material, at the semiconductor surface,
and at the gate/channel interface, ohmic ZnO channels without gate were investigated in detail,
especially concerning the dependency of the noise on geometrical variations. The experiments
suggest that the dominating 1/f noise in the frequency range below 1 kHz is generated within the
bulk channel material, both for bare ZnO channels and MESFETs.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:31224 |
| Date | 14 August 2018 |
| Creators | Klüpfel, Fabian J., von Wenckstern, Holger, Grundmann, Marius |
| Publisher | American Institute of Physics, Universität Leipzig |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 0003-6951, 1077-3118, 033502 |
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