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Lasing in cuprous iodide microwires

We report on the observation of lasing in cuprous iodide (CuI) microwires. A vapor-phase transport
growth procedure was used to synthesize CuI microwires with low defect concentration. The crystal
structure of single microwires was determined to be of zincblende-type. The high optical quality of
single microwires is indicated by the observed series of excitonic emission lines as well as by the formation
of gain under optical excitation. Lasing of triangular whispering-gallery modes in single
microwires is demonstrated for fs- and ns-excitation from cryogenic temperatures up to 200 K. Timeresolved
micro-photoluminescence studies reveal the dynamics of the laser process on the time scale
of several picoseconds.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:23549
Date06 August 2018
CreatorsWille, Marcel, Krüger, Evgeny, Blaurock, Steffen, Zviagin, Vitaly, Deichsel, Rafael, Benndorf, Gabriele, Trefflich, Lukas, Gottschalch, Volker, Krautscheid, Harald, Schmidt-Grund, Rüdiger, Grundmann, Marius
PublisherAmerican Institute of Physics, Universität Leipzig
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation0003-6951, 1077-3118, 031105

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