Semiconductor memory is one of the key technologies driving the success of Si-based information technology within the last five decades. The most prominent representative memory type, the dynamic random access memory(DRAM)was patented in 1967 and was introduced into the market by Intel Corporation in 1972. Until the year 2001 and the realization of the 110 nm technology node, DRAM was the driving force on the lithography shrink roadmap, before NAND FLASH took over that role. Hence, the development of the DRAM technology was long time the forerunner for the exponentially growing large-scale integration and promoted similar advances in logic chips. One of the reasons of the success of the DRAM is its simple cell structure, which consists of only one transistor (1T) and one capacitor (1C), where the information is stored in form of a charge.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:76837 |
| Date | 06 May 2022 |
| Creators | Schroeder, Uwe, Cho, Kyuho, Slesazeck, Stefan |
| Publisher | World Scientific Publishing |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:bookPart, info:eu-repo/semantics/bookPart, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 978-981-4740-47-0, 978-981-4740-49-4, 10.1142/9908 |
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