In this review the different concepts of nanoscale resistive switching memory devices are described and classified according to their I–V behaviour and the underlying physical switching mechanisms. By means of the most important representative devices, the current state of electrical performance characteristics is illuminated in-depth. Moreover, the ability of resistive switching devices to be integrated into state-of-the-art CMOS circuits under the additional consideration with a suitable selector device for memory array operation is assessed. From this analysis, and by factoring in the maturity of the different concepts, a ranking methodology for application of the nanoscale resistive switching memory devices in the memory landscape is derived. Finally, the suitability of the different device concepts for beyond pure memory applications, such as brain inspired and neuromorphic computational or logic in memory applications that strive to overcome the vanNeumann bottleneck, is discussed.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:82059 |
| Date | 10 November 2022 |
| Creators | Slesazeck, Stefan, Mikolajick, Thomas |
| Publisher | IOP Publishing |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 1361-6528, https://doi.org/10.1088/1361-6528/ab2084 |
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