The evolution of electrical resistance as function of defect concentration is examined for the
unipolar n-conducting oxides CdO, β-Ga 2 O 3 , In 2 O 3 , SnO 2 and ZnO in order to explore the
predictions of the amphoteric defect model. Intrinsic defects are introduced by ion irradiation
at cryogenic temperatures, and the resistance is measured in-situ by current–voltage sweeps as
a function of irradiation dose. Temperature dependent Hall effect measurements are performed
to determine the carrier concentration and mobility of the samples before and after irradiation.
After the ultimate irradiation step, the Ga 2 O 3 and SnO2 samples have both turned highly
resistive. In contrast, the In 2 O 3 and ZnO samples are ultimately found to be less resistive than
prior to irradiation, however, they both show an increased resistance at intermediate doses.
Based on thermodynamic defect charge state transitions computed by hybrid density
functional theory, a model expanding on the current amphoteric defect model is proposed.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:85017 |
| Date | 27 April 2023 |
| Creators | Borgersen, J., Vines, L., Frodason, Y.K., Kuznetsov, A., von Wenckstern, Holger, Grundmann, Marius, Allen, M., Zuniga-Perez, J., Johansen, K.M. |
| Publisher | IOP Publishing |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 1361-648X, 50571 |
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