Silicon has been the fundamental material for most semiconductor devices. As Si devices continue to scale down, there is a growing need to gain a better understanding of the characteristics of Si-based nanostructures and to develop novel fabrication methods for devices with extremely small dimensions. Ion beam implantation as a ubiquitous industrial method is a promising candidate for introducing dopants into semiconductor devices. Although the interactions between ion beams and Si nanostructures have been studied for several decades, many questions still remain unanswered, especially when the size of the target structure and the interaction volume of the incident ion beam have similar extents. Recent studies have demonstrated different potential use cases of ion beam interactions with Si nanostructures, such as Si nanocrystals (SiNCs). One of them is to use SiNCs embedded in a SiO2 layer as the Coulomb blockade for a single electron transistor (SET) device. In this work, we demonstrate the ion beam synthesis of SiNCs, as well as other ion beam interactions with Si-based nanostructures.
To build the basic structure of a room-temperature SET, both conventional broad-beam implantation and a focused Ne+ beam from a helium ion microscope (HIM) were used for ion beam mixing. Subsequent annealing using rapid thermal processing (RTP) triggered phase separation and Ostwald ripening, where small nucleated Si clusters merge to form larger ones with the lowest surface free energy. Various ion implantation parameters were tested, along with different conditions during the RTP treatment. The SiNC structures were examined with energy-filtered transmission electron microscopy (EFTEM) to determine the optimum fabrication conditions in terms of ion beam fluence and thermal budget for the RTP treatment. Due to their small size and the resulting quantum confinement, SiNCs also exhibited optical activity, which was confirmed by photoluminescence spectroscopy on both broad-beam irradiated blank wafers and vertical hybrid nanopillar structures with embedded SiNCs. By scanning a laser probe over the sample and integrating the signal close to the emission peak, 1 μm-wide micropads with embedded SiNCs could be spatially resolved and imaged, demonstrating a new method of patterning and visualizing the SiNC emission pattern.
To integrate SiNCs into vertical nanopillars for the fabrication of the SET, a fundamental study was conducted on the interaction between ions and vertical Si nanopillars. It was discovered that irradiating vertical Si nanopillars with ion fluence up to 2×1016 cm−2 immediately caused amorphization and plastic deformation due to the ion hammering effect and the viscous flow of Si during the irradiation. However, amorphization could be avoided by heating the substrate to above 350 °C, which promotes dynamic annealing. Several factors, including substrate temperature, ion flux, and nanostructure geometry, determine whether ion irradiation causes amorphization. Furthermore, at sufficiently high substrate temperatures, increasing ion fluence gradually reduced the diameter of the nanopillars due to forward sputtering from ions on the sidewalls. With a fluence up to 8×1016 cm−2 from broad-beam Si+, the diameter of Si nanopillars could be reduced by 50% to approximately 11 nm. Similar experiments were conducted on vertical nano-fin structures, which were thinned down to about 16 nm with Ne+ irradiation from the HIM. However, electrical measurements with scanning spreading resistance microscopy (SSRM) showed that the spreading resistance of the fins increased, even at a lower fluence of 2×1016 cm−2, which was too high for subsequent device integration. Nevertheless, these findings contributed to achieving the CMOS-compatible manufacturability of room-temperature SET devices and furthered our understanding of the fundamentals of ion interactions with Si nanostructures.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:90093 |
| Date | 26 February 2024 |
| Creators | Xu, Xiaomo |
| Contributors | Faßbender, Jürgen, Webb, Roger, Technische Universität Dresden |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, doc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | info:eu-repo/grantAgreement/Europäische Kommission/Horizon2020/688072//Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology/IONS4SET |
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