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Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxy

No description available.
Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/9458
Date01 1900
CreatorsTriplett, Gregory Edward, Jr.
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Languageen_US
Detected LanguageEnglish
TypeDissertation
Format2547398 bytes, application/pdf

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