A test chip design is presented for the characterization of process variations and Through
Silicon Via (TSV) induced mechanical stress in 3D integrated circuits. The chip was de-
signed, layed-out, and taped-out for fabrication in a 130nm Tezzaron/GlobalFoundries
process through CMC microsystems. The test chip takes advantage of the architecture
of 3D ICs to split its test structure onto the two tiers of the 3D IC, achieving a device
array density of 40.94 m2 per device. The design also has a high spatial resolution and
measurement delity compared to similar 2D variation characterization test structures.
Background leakage subtraction and radial ltering are two techniques that are ap-
plied to the chip's measurements to reduce its error further for subthreshold device current
measurements and stress-induced mobility measurements, respectively. Experimental mea-
surements are be taken from the chip using a custom PCB measurement setup once the
chip has returned from fabrication.
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:OWTU.10012/7888 |
| Date | January 2013 |
| Creators | O'Sullivan, Conor |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
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