In this thesis, two series of self-assembled GaN and AlxGa1-xN nanorods are grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si(111) wafer. The Al contents in AlxGa1-xN nanorods is varied from 6% to 75% by changing the Al cell beam flux (BFM). Second, the GaN/AlGaN multiple quantum wells (MQWs) with variation thickness are grown on the GaN nanorods with a p-GaN layer on the top. Al concentration is determined by electron probe x-ray micro-analysis (EPMA) and x-ray diffraction (XRD). The reflection high-energy electron diffraction (RHEED) and scanning electron microscopy (SEM) images show that the height, density and morphology of nanorods depend on the Al content. The (micro-)PL, CL and Raman spectra also show the variation of the characterization from those of GaN to AlN. The transmission electron microscopy (TEM) images show that the GaN/AlGaN MQWs structures with well widths of 1, 2, 3, 4, 6, 8 and 16 c-LC (Lattice constant on c-direction) were successful grown on the nanorods. The (micro-)PL and CL spectra show red-shift of the peak position with the decrease of Mg-doped concentration. When the well thickness is less then 4 c-LC, the CL spectra show blue-shift of the peak position with the decrease of the well thickness due to the Quantum-confined effect and the polarization effect in MQWS.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0130104-135317 |
| Date | 30 January 2004 |
| Creators | Chi, Tung-Wei |
| Contributors | Min-Hsiung Tsai, Li-Wei Tu, Der-Jung Jang, I-kai Lo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0130104-135317 |
| Rights | unrestricted, Copyright information available at source archive |
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