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Characterizing LED with Time-Resolved Photo-Luminescence and Optical Beam Induced Current Imaging

With rapid development of light emitting device, the detection techniques of semiconductor are more and more important, which include time-resolved photoluminescence (TRPL) and optical beam induced current (OBIC) microscopy. In this thesis, we realize the carrier behaviors of active region with multiple quantum wells (MQWs) by these microscopies, and the samples are light emitting diodes (LEDs). However, PL intensity of LEDs increase but OBIC not due to external field compensates, on the other hand, reducing PL lifetime indicates the response time of device shorter with higher reverse bias.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0217111-150118
Date17 February 2011
CreatorsWu, Shang-jie
ContributorsFu-jen Kao, Hung-wen Chang, Wood-hi Cheng
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0217111-150118
Rightsoff_campus_withheld, Copyright information available at source archive

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