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Valence-Conduction Band Mixing Effect In Type-¢º Superlattice

We study the electronic band structure of bulk within a six-band bond-orbital model. All interaction parameters of this model involved are directly related to parameters for describing bulk bands near the zone center in the k¡Ep finite difference method. To study the conduction-valence band mixing effect, we calculate the electronic band structure for the InAs-GaSb superlattice, within a six-band bond-orbital model. In the InAs-AlSb-GaSb-AlSb superlattice, we find that energy-gap of this material will change rapidly with different AlSb layer thickness. This indicates that the e-X line observed in far-infrared cyclotron-resonance spectrum is originated from conduction-valence band mixing effect. This result is in good agreement with the experimental results.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0617102-131550
Date17 June 2002
CreatorsChang, Chun-Chin
ContributorsJih-Chen Chiang, I-Min Jiang, Jiaun-Shing Shyu
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617102-131550
Rightsunrestricted, Copyright information available at source archive

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