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The study of InGaN illumination intensity affected with post annealing environment

We will add AlN and InN powder in order to change the post annealing environment. We want to understand the quality and optical properties of InGaN/GaN quantum well undergoing post annealing.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0620102-123716
Date20 June 2002
CreatorsShen, Yu-Ling
Contributorsnone, none, none, none
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620102-123716
Rightsunrestricted, Copyright information available at source archive

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