ABSTRACT
In this work , a Four-Point probe electrical measurement system has been set up to investigate the non-linear conductivity of gold thin film on silicon . The annealing effect of gold thin films has been carried out by a rapid thermal annealing system using a modified tube furnace .The conductivities of gold thin film on silicon are studied for film thickness of 100-500 Å , different annealing temperature from 150-500¢J, annealing duration of 10-40mins on two kinds of substrate¡]n-type¡Bp-type silicon¡^. Samples are examined by SEM¡BAFM¡BXRD and FTIR to characterize the surface morphology of gold thin film on silicon , the silicide formation,and non-linear dc response in every different conditions.
Finally , we proposed a Random Tunneling Junction Network model to explain the non-linear dc response and discussed the correlation between the tunneling junction of gold clusters and the changes of it¡¦s distribution , the silicide formation combining with breakdown of the junction bridges and the parameters from the RTJN model.
Our numerical result reveals good agreement with the experiment data.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0625102-143824 |
| Date | 25 June 2002 |
| Creators | Wang, wei-chi |
| Contributors | Uerng-Yih Ueng, Tai-Fa Young, Ting-Chang Chang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0625102-143824 |
| Rights | unrestricted, Copyright information available at source archive |
Page generated in 0.0018 seconds