Abstract
The theme of this thesis is the MBE growth of doped arsenide compound semiconductor layers including uniformly doped layers and a modulation-doped heterostructure. The Hall measurement system has been set up to measure the carrier concentration and mobility of these samples. We have also studied the ohmic contacts on epitaxial InGaAs layers by TLM method.
For uniformly doped samples, the experimental relation between doping concentration and MBE cell temperature have been established, and are in good agreement with reported results. In the experiment on GaAs/AlGaAs modulation-doped heterostructure, an electron mobility of 27000[cm2/(V•s)] was obtained by cooling the sample down to 170K with liquid nitrogen. This result is consistent with published results. For P-type ohmic contacts on InGaAs, a comparison between two metal layer compositions of Cr+Zn+Au and Cr+Zn+Cr+Au was made. The Cr+Zn+Cr+Au layer gave a lowest specific contact resistance of 3.38¡Ñ10-6(ohm•cm2) at an annealing temperature of 360¢J. A N-type ohmic contact of Au+Ge+Au was also investigated. This metal layer has a lowest specific contact resistance of 9.75¡Ñ10-7(ohm•cm2) without annealing.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0626102-201622 |
| Date | 26 June 2002 |
| Creators | Wang, Hung-Sen |
| Contributors | Li-Wei Tu, Tsong-Sheng Lay, Tao-Yuan Chang, Ming-Kwei Lee, Yeong-Her Wang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626102-201622 |
| Rights | not_available, Copyright information available at source archive |
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