ABSTRACT It is very common that the driven voltage of the Light emitting diode device is around 1.8eV~2.2eV, however, in its applications the voltage that applied on the circuit is higher than this specification (3 eV as usual). It will be very annoying that the design of the LED circuit should always be in series with an extra resistor in order to protect the LED. In here we propose a method with a schottky contact structure on the device that we can solve this problem. Before we proceed this method, we had better fully understand the characteristics of the material physical properties , schottky contact and ohmic contact ,also include of the process of device. The substrate of the LED diode was chosen with N-GaP(111). The metal for the ohmic contact in this device is composed of Au/Au-Ge alloy. As to the schottky contact , the metal is formed by using Au element. The techniques for characterizing these contact properties include current-voltage (I-V), specific contact resistance (rc), ideal factor and current transport etc. The LED diode is also annealed at 450ºC for 10 minutes for improving the performance. The X-ray diffraction technique is applied to Investigate the interface of the contact area. The results of this experiment are summarized below: (I) The I-V curve of Ohmic contact is linear and contact resistance irc =7

Abstract The theme of this thesis is the MBE growth of doped arsenide compound semiconductor layers including uniformly doped layers and a modulation-doped heterostructure. The Hall measurement system has been set up to measure the carrier concentration and mobility of these samples. We have also studied the ohmic contacts on epitaxial InGaAs layers by TLM method. For uniformly doped samples, the experimental relation between doping concentration and MBE cell temperature have been established, and are in good agreement with reported results. In the experiment on GaAs/AlGaAs modulation-doped heterostructure, an electron mobility of 27000[cm2/(V•s)] was obtained by cooling the sample down to 170K with liquid nitrogen. This result is consistent with published results. For P-type ohmic contacts on InGaAs, a comparison between two metal layer compositions of Cr+Zn+Au and Cr+Zn+Cr+Au was made. The Cr+Zn+Cr+Au layer gave a lowest specific contact resistance of 3.38¡Ñ10-6(ohm•cm2) at an annealing temperature of 360¢J. A N-type ohmic contact of Au+Ge+Au was also investigated. This metal layer has a lowest specific contact resistance of 9.75¡Ñ10-7(ohm•cm2) without annealing.

III-V semiconductor nanowires (NWs) are often referred to as one-dimensional (1-D) materials because of their high aspect ratios and excellent quantum confinement properties. Spacing between NWs in a NW array is on the order of ~102 nm, which is close to the wavelength of visible light. These properties make NWs have excellent light trapping effects and suitability for optoelectronic applications, such as solar cells and photodetectors. Gallium arsenide (GaAs) has high electron mobility and a band gap of 1.424 eV, which makes it an ideal material for solar cells. Since GaAs NWs can be grown on either GaAs substrates or foreign substrates such as silicon (Si) substrates without lattice mismatch issues, they are being widely studied for photovoltaic applications. GaAs NWs could be achieved by the vapor-liquid-solid (VLS) method in molecular beam epitaxy (MBE), or etching a GaAs substrate by inductively coupled plasma reactive ion etching (ICP-RIE). Cyclotene was used as the filling material in gaps between NWs to support a low sheet resistance front contact and prevent shunts. An In/ITO contact was developed to achieve a lower contact resistance to n-GaAs NWs than an ITO contact, while it had a similar transmittance as ITO. A crack test also showed that insertion of a thin indium layer between ITO and GaAs NWs solved the ITO crack issue during heating that resulted from a large difference in coefficients of thermal expansion (CTE) between ITO and cyclotene. Energy dispersive x-ray spectrometry (EDS) was used to determine indium diffusion into NWs, and it showed that indium diffusion was not so significant to damage the features in NWs. A novel method to achieve substrate-free NW arrays by combining ICP-RIE and selective chemical etching together was also introduced. This method made it possible to measure the transmittance of NW arrays and contact layers for the first time. Absorption of GaAs NW arrays with various NW diameters and periods were also determined experimentally. / Thesis / Master of Applied Science (MASc)

This paper reviews the analytical strategy employed in conventional p-n junction. Then it goes through the analysis of magnetic p-n junction in the same strategy, which makes the review of magnetic p-n junction succinct. I-V equation of magnetic diode is the result of the p-n junction analysis. However, of great importance is to form an acceptable ohmic contact on magnetic diode, which is assumed to be ideal during the magnetic p-n junction analysis. The paper moves on to ohmic contact for magnetic diode, with the example of GaN based magnetic material. With the calculation of the shift of Fermi level in n-GaN with band splitting, conventional ohmic contact structure for n-GaN can be employed to magnetic n-GaN. Experiments from one group prove it. Ohmic contact optimization experiment on n-GaN is present. Ni/Au deposition on n-GaN shows an acceptable ohmic contact. The outlook part points out that the way for research on Schottky diode on magnetic material is partially paved by contents included in this paper.

Gallium Oxide (Ga2O3) has emerged over the last decade as a new up-and-coming alternative to traditional wide bandgap semiconductors. It exists as five polymorphs (α-, β-, γ-, δ-, and ε-Ga2O3), of which β-Ga2O3 is the thermodynamically stable form, and the most extensively studied phase. β-Ga2O3 has a wide bandgap of ~4.8 eV and exhibits a superior figure-of-merit for power devices compared to other wide bandgap materials, such as SiC and GaN. These make β-Ga2O3 a promising candidate in a host of electronic and optoelectronic applications. Recent advances in β-Ga2O3 single crystals growth have also made inexpensive β-Ga2O3 single crystal grown from the melt a possibility in the near future. Despite the plethora of literature on β-Ga2O3-based devices, understanding of contacts to this material --- a device component that fundamentally determines device characteristics — remained lacking. For this research, ohmic and Schottky metal contacts to Sn-doped β-Ga2O3 (-201) single crystal substrates, unintentionally doped (UID) homoepitaxial β-Ga2O3 (010) on Sn-doped β-Ga2O3 grown by molecular beam epitaxy (MBE), and UID heteroepitaxial β-Ga2O3 (-201) epitaxial layers on c-plane sapphire by metal-organic chemical vapor deposition (MOCVD) were investigated. Each of the substrates was characterized for their structural, morphological, electrical, and optical properties, the results will be presented in the following document. Nine metals (Ti, In, Ag, Sn, W, Mo, Sc, Zn, and Zr) with low to moderate work functions were studied as possible ohmic contacts to β-Ga2O3. It was found that select metals displayed either ohmic (Ti and In) or pseudo-ohmic (Ag, Sn and Zr) behavior under certain conditions. However, the morphology was often a problem as many thin film metal contacts dewetted the substrate surface. Ti with a Au capping layer with post-metallization annealing treatment was the only consistently reliable ohmic contact to β-Ga2O3. It was concluded that metal work function is not a dominant factor in forming an ohmic contact to β-Ga2O3 and that limited interfacial reactions appear to play an important role. Prior to a systematic study of Schottky contacts to β-Ga2O3, a comparison of the effects of five different wet chemical surface treatments on the β-Ga2O3 Schottky diodes was made. It was established that a treatment with an organic solvent clean followed by HCl, H2O2 and a deionized water rinse following each step yielded the best results. Schottky diodes based on (-201) β-Ga2O3 substrates and (010) β-Ga2O3 homoepitaxial layers were formed using five different Schottky metals with moderate to high work functions: W, Cu, Ni, Ir, and Pt. Schottky barrier heights (SBHs) calculated from current-voltage (I-V) and capacitance-voltage (C-V) measurements of the five selected metals were typically in the range of 1.0 – 1.3 eV and 1.6 – 2.0 eV, respectively, and showed little dependence on the metal work function. Several diodes also displayed inhomogeneous Schottky barrier behavior at room temperature. The results indicate that bulk or near-surface defects and/or unpassivated surface states may have a more dominant effect on the electrical behavior of these diodes compared to the choice of Schottky metal and its work function. Lastly, working with collaborators at Structured Materials Industries (SMI) Inc., heteroepitaxial films of Ga2O3 were grown on c-plane sapphire (001) using a variety of vapor phase epitaxy methods, including MOVPE, and halide vapor phase epitaxy (HVPE). The stable phase β-Ga2O3 was observed when grown using MOVPE technique, regardless of precursor flow rates, at temperatures ranging between 500 – 850 °C. With HVPE growth techniques, instead of the stable β-phase, we observed the growth of the metastable α- and ε-phases, often a combination of the two. Cross-sectional transmission electron microscopy (TEM) shows the better lattice matched α-phase first growing semi-coherently on the c-plane sapphire substrate, followed by domain matched epitaxy of ε-Ga2O3 on top. Secondary ion mass spectrometry (SIMS) revealed that epilayers forming the ε-phase contain higher concentrations of chlorine, which suggests that compressive stress due to Cl- impurities may play a role in the growth of ε-Ga2O3 despite it being less than thermodynamically favorable.

<p>As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. One disadvantage of the BJT compared with MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) is that the BJT requires a more complex drive circuit with higher power capability. For the SiC BJT to become competitive with field effect transistors, it is important to achieve high current gains to reduce the power required by the drive circuit. Although much progress in SiC BJTs has been made, SiC BJTs still have low common emitter current gain typically in the range 10-50. In this work, a record high current gain exceeding 60 has been demonstrated for a SiC BJT with a breakdown voltage of 1100 V. This result is attributed to an optimized device design, a stable device process and state-of-the-art epitaxial base and emitter layers.</p><p>A new technique to fabricate the extrinsic base using epitaxial regrowth of the extrinsic base layer was proposed. This technique allows fabrication of the highly doped region of the extrinsic base a few hundred nanometers from the intrinsic region. An important factor that made removal of the regrowth difficult was that epitaxial growth of very highly doped layers has a faster lateral than vertical growth rate and the thickness of the p+ layer therefore has a maximum close to the base-emitter sidewall. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain the low current gain.</p><p>Under high power operation, the SiC BJTs were strongly influenced by self-heating, which significantly limits the performance of device. The DC I-V characteristics of 4H-SiC BJTs have also been studied in the temperature range 25 °C to 300 °C. The DC current gain at 300 °C decreased 56 % compared to its value at 25 °C. Selfheating effects were quantified by extracting the junction temperature from DC measurements.</p><p>To form good ohmic contacts to both n-type and p-type SiC using the same metal is one important challenge for simplifying SiC Bipolar Junction Transistor (BJT) fabrication. Ohmic contact formation in the SiC BJT process was investigated using sputter deposition of titanium tungsten to both n-type and p-type followed by annealing at 950 oC. The contacts were characterized with linear transmission line method (LTLM) structures. The n+ emitter structure and the p+ base structure contact resistivity after 30 min annealing was 1.4 x 10-4 Ωcm2 and 3.7 x 10-4 Ωcm2, respectively. Results from high-resolution transmission electron microscopy (HRTEM), suggest that diffusion of Si and C atoms into the TiW layer and a reaction at the interface forming (Ti,W)C1-x are key factors for formation of ohmic contacts.</p>

The market for renewable energy sources, and solar cells in particular is growing year by year, as a result there is a large interest in research on new materials and new technologies for solar power applications. In this thesis the photovoltaic properties of cubic silicon carbide (3C-SiC) has been investigated. The research includes material growth using the sublimation epitaxy method, both n-type and p-type SiC have been investigated. 3C-SiC pn junctions have been produced and their electrical properties have been characterized, this is the first time 3C-SiC pn junctions have been studied in the research group. Photoresponse has been demonstrated from a 3C-SiC pn junction with Al and N used as p- and ntype dopants. This is the first demonstrated solar cell performance using 3C-SiC, to our knowledge.

Les microcommutateurs MEMS ohmiques comportent un contact électrique sous très faible force, très sensible à des paramètres difficiles à maîtriser. Ce contact a été l'objet d'une méthode de modélisation développée précédemment au LAAS-CNRS, dont le principe consiste à effectuer une simulation par éléments finis du contact mécanique avec les données AFM puis évaluer analytiquement la résistance électrique. Cette thèse a pour objectif d'évaluer les possibilités d'extension de cette méthode à des simulations multiphysiques.La thèse comporte une partie dédiée à la validation de la simulation mécanique par éléments finis par rapport à des résultats expérimentaux obtenus précédemment.Des simulations multiphysiques sont alors réalisées et les résultats en termes de résistance électrique sont comparés avec des résultats expérimentaux. On observe une très forte sous estimationde la résistance électrique, et donc des élévations de température. Ce constat est attribué à la présence de films isolants en surface d'une au moins des surfaces de contact.Enfin, des modèles qui incluent un film isolant sont développés avec une géométrie simplifiée d'aspérité. Les modèles les plus intéressants incluent des "nanospots": le film isolant est parsemé de zones conductrices, de très faibles dimensions. Les résultats permettent de cerner les caractéristiques typiques possibles de la géométrie dans cette configuration. / MEMS ohmic microswitches include very low force electrical contacts. These are very sensitive to parameters which reveal difficult to control. A previously developed modelization method consists in computing mechanical contact using finite elements, then estimating electrical resistance using analytical expressions. Here we focus on the possibilities of multiphysical finite element computations instead.Validation of the contact mechanical computation is first attempted, based on experimental results of previous works. Multiphysical contact computations are carried out. Resulting electrical contact resistance isfound to be much lower than experimental results. The presence of insulating surface films is supposedly the cause for that. Eventually, a simplified geometry for asperities is used to build models with insulating films.The most relevant models feature “nanospots”: some very small conductive areas are scattered on the contact area. The results allow us to determine some possible geometry configurations that could lead to contact resistance values such as those measured on real devices.

Les phases MAX sont des carbures ou nitrures ternaires dont les propriétés sont généralement décrites comme la combinaison exceptionnelle des meilleures propriétés des métaux et des céramiques. Sous forme de couches minces, ces matériaux sont prometteurs en tant que contact ohmique sur des substrats de SiC pour la microélectronique de puissance. Des approches originales dédiées à l'obtention de films minces épitaxiés des phases MAX Ti2AlN, Ti3SiC2 et Ti3(Si,Ge)C2 sont développées dans ce travail. Des recuits à 750°C de systèmes multicouches (Ti+Al)/AlN permettent ainsi de former des couches de Ti2AlN fortement texturées sur des substrats de SiC ou Al2O3. La seconde approche consiste à recuire à 1000°C des couches de TixAly ou TixGey, déposés sur 4H-SiC, pour obtenir des films minces épitaxiés de Ti3SiC2 et Ti3(Si,Ge)C2. Ces derniers présentent les caractéristiques d'un contact ohmique sur SiC. / MAX phases are a family of ternary carbides or nitrides which properties are generally described as an exceptional combination of the best properties of metals and ceramics. Thin films of MAX phases being considered as good candidates for ohmic contacts on SiC substrates for power microelectronics devices, thin films of Ti2AlN and Ti3(Si,Ge)C2 were synthesized by using original approaches. Highly textured Ti2AlN thin films were so obtained by thermal annealing at 750°C of (Ti+Al)/AlN multilayers whereas epitaxial thin films of Ti3SiC2 on 4H-SiC were achieved after an annealing at 1000°C of TixAly or TixGey layers. Good ohmic contact behaviors of Ti3SiC2 layers were confirmed in this work whereas Ti2AlN thin films behave as Schottky barriers.

In 1972 Fujishima and Honda conceptualised a photoelectrochemical cell for hydrogen generation via PEC water splitting. Hydrogen as a clean energy carrier provides environmentally friendly energy storage solutions or can fuel certain applications. This idea has since then been further built upon with new materials and combinations with the aim of improving efficiency. In this project n-type cubic silicon carbide thick layers were grown by a sublimation method and characterised for water splitting performance. A generated photo-current density of 0.45 mA/cm2 was measured with no bias between the working and counter electrodes.