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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Measurement setup for High Power Impulse Magnetron Sputtering

Sveinsson, Ólafur Björgvin January 2011 (has links)
Recently material physics group at Science Institute of University of Iceland has been using reactive sputtering to grow thin films used in various research projects at the institute. These films have been grown using dc sputtering which has been proven a very successful method. High power impulse magnetron sputtering or HiPIMS is an new pulsed power sputtering method where shorter but high power pulses are used to sputter over lower steady power. The project resulted in a functional system capable of growing thin films using HiPIMS. Thin films grown with high power pulses have a higher film density and other more preferable properties compared to films grown using direct current magnetron sputtering.
2

Plasma-assisted deposition using an unbalanced magnetron

Ja'fer, Hussein Abidjwad January 1993 (has links)
It is well known that ion bombardment of growing films can strongly influence their microstructure and consequently their physical properties. The available technology for ion assisted deposition, particularly where separate sources are used for the deposition flux and the ion flux, is difficult to implement in many production situations. The planar magnetron provides a controllable ion flux while retaining the many other desirable features of simplicity, high deposition rate, geometric versatility and tolerance of reactive gases. This assists in the implementation of ion beam assisted deposition in both research and production.
3

Propriedades supercondutoras de filmes finos de Nb depositados por magnetron sputtering

ROLIM, Ana Luiza de Souza January 1996 (has links)
Made available in DSpace on 2014-06-12T18:05:51Z (GMT). No. of bitstreams: 2 arquivo7695_1.pdf: 2537717 bytes, checksum: 60ca15ac8000b97ca710ead44bed4782 (MD5) license.txt: 1748 bytes, checksum: 8a4605be74aa9ea9d79846c1fba20a33 (MD5) Previous issue date: 1996 / Conselho Nacional de Desenvolvimento Científico e Tecnológico / Neste trabalho é estudado a deposição de filmes finos metálicos e refratários por magnetron sputtering utilizando-se tanto de uma fonte de como rf. Os pontos ótimos de trabalho foram determinados em função da pressão na câmara de deposição e da potência das fontes para os seguintes materiais: Nb, Ti, Mo, W e Si, obtendo assim um treinamento na utilização da máquina de deposição ao mesmo tempo que preparando-a para futuros usuários. Especial atenção é dada à deposição e caracterização de filmes finos de Nb com espessura entre 300 Å e 10000 Å. As características supercondutoras destes filmes são analisadas através de medidas de susceptibilidade ac, magnetização dc e da razão de resistência. O diagrama de fase campo magnético temperatura (H-T), obtido de seqüências de esfriamento a campo nulo (ZFC) e em campo (FC), revela uma forte dependência da linha de irreversibilidade com a espessura do filme. Em filmes mais finos a região de irreversibilidade diminui. Este efeito é atribuído a danos superficiais causados por tensões ou por defeitos
4

Deposition and Characterization of Magnetron Sputtered Beta-Tungsten Thin Films

Liu, Jiaxing January 2016 (has links)
β-W is an A15 structured phase commonly found in tungsten thin films together with the bcc structured W, and it has been found that β-W has the strongest spin Hall effect among all metal thin films. Therefore, it is promising for application in spintronics as the source of spin-polarized current that can be easily manipulated by electric field. However, the deposition conditions and the formation mechanism of β-W in thin films are not fully understood. The existing deposition conditions for β-W make use of low deposition rate, high inert gas pressure, substrate bias, or oxygen impurity to stabilize the β-W over α-W, and these parameters are unfavorable for producing β-W films with high quality at reasonable yield. In order to optimize the deposition process and gain insight into the formation mechanism of β-W, a novel technique using nitrogen impurity in the pressure range of 10-5 to 10-6 torr in the deposition chamber is introduced. This techniques allows the deposition of pure β-W thin films with only incorporation of 0.4 at% nitrogen and 3.2 at% oxygen, and β-W films as thick as 1μm have been obtained. The dependence of the volume fraction of β-W on the deposition parameters, including nitrogen pressure, substrate temperature, and deposition rate, has been investigated. The relationship can be modeled by the Langmuir-Freundlich isotherm, which indicates that the formation of β-W requires the adsorption of strongly interacting nitrogen molecules on the substrate. The dependence of β-W formation on the choice of underlayer materials has also been investigated. The β-W phase can only be obtained on the underlayer materials containing non-metallic elements. The dependence is explained by the existence of strong covalent bonds in β-W compared with that in α-W. The nickel and permalloy underlayers are the only exception to the above rule, and β-W has been successfully deposited on permalloy underlayer using very low deposition rate for spin-diffusion length measurement of β-W. The permalloy thin films usually take the (111) texture, since its (111) planes have the lowest surface energy. However, permalloy thin films deposited on β-W underlayer can achieve (002) texture using amorphous glass substrates. Therefore, the permalloy/β-W bilayer system can work as a seed layer for the formation of (002) textured films with fcc or bcc structure. The mechanism of the (002) texture formation cannot be explained by the existing models. The β-W to α-W phase transition was characterized by differential scanning calorimetry. The enthalpy of transformation is measured to be 8.3±0.4 kJ/mol, consistent with the value calculated using density functional theory. The activation energy for the β-W to α-W phase transformation kinetics is 2.2 eV, which is extremely low compared with that of lattice and grain boundary diffusion in tungsten. The low activation energy might be attributed to a diffusionless shuffle transformation process.
5

Silicon and Silicon Nitride Prepared by Ratio-frequency magnetron sputtering on Silicon and Glass substrates

Yang, Chi-Chang 06 July 2007 (has links)
Silicon and silicon nitride thin films were growth on Si and glass substrates at room temperature by ratio-frequency (r-f) magnetron sputtering. The electrical characteristics of the silicon nitride films were characterized using I-V and C-V measurement under different growth condition, including r-f power, nitrogen partial pressure, and hydrogen partial pressure. Minimum current leakages for MIS structure as low as 2¡Ñ10 A/cm were obtained at 1 MV/cm electrical field with hysteresis voltage about 2V. The root-mean square surface roughness of the silicon nitride film is less then 1nm. In addition, silicon nitride capacitors with indium-tin-oxide as electrodes were fabricated. Silicon thin films prepared by R.F. magnetron sputtering at room temperature are amorphous. The measurements on the variation of the photo-conductivity were used to characterize the characteristics of the Si film.
6

Spectroscopic Ellipsometry Studies of CdS/CdTe Thin Films and Photovoltaic Devices

Sestak, Michelle Nicole 18 December 2012 (has links)
No description available.
7

Deposição e caracterização de filmes finos de CrN depositados por diferentes processos de magnetron sputtering / Deposition and characterization of CrN thin films deposited by different magnetron sputtering processes

Guimarães, Monica Costa Rodrigues 03 July 2017 (has links)
O PVD (Physical Vapor Deposition- Deposição física na fase de vapor) é um meio utilizado para a produção de recobrimentos e empregado em grande escala industrial. É um processo de deposição atômica no qual o material é vaporizado de alvo sólido por sputtering e posteriormente condensado sobre a peça a ser revestida na forma de filme. O processo ocorre em uma câmara de vácuo, na presença de plasma, e por diferença de potencial os íons, na forma pura ou combinados com átomos de hidrogênio ou carbono, são movidos para a superfície do substrato. Uma técnica relativamente nova de sputtering é o HiPIMS (High Power Impulse Magnetron Sputtering) que utiliza impulsos de energia extremamente altas com densidade de potência possibilitando filmes com melhores performances e mais densos. No presente trabalho filmes de nitreto de cromo (CrN) foram depositados por duas técnicas de magnetron sputtering, HiPIMS e DCMS (Direct Current Magnetron Sputtering), variando frequência de pulso em 400 Hz, 450 Hz e 500 Hz para o HiPIMS e a tensão de polarização em 0 V, -20 V, -40V, -60V, - 100 V e -140 V para os dois processos. Foram obtidos filmes com maior dureza, menor rugosidade para HiPIMS, no entanto DCMS apresentou maior taxa de deposição. O aumento da frequência nos filmes HiPIMS, assim como o aumento da tensão de polarização negativa possibilitaram filmes com morfologia mais densa e homogênea. Este fato também foi observado com o aumento do valor de bias nos filmes depositados por DCMS. Os valores de dureza obtidos (17 ± 2 para DCMS e 26 ± 1 para HiPIMS) são superiores aos reportados na literatura e podem estar relacionados ao efeito de \"multicamadas\" obtido pela oscilação do substrato. / PVD (Physical Vapor Deposition) is a process used for coatings deposition and it is used on a large industrial scale. It is an atomic deposition process in which the material is vaporized from solid target by sputtering and then condensed onto the part to be coated in film form. The process occurs in a vacuum chamber in the presence of plasma, and by potential difference the ions in pure form or combined with hydrogen or carbon atoms are moved to the surface of the substrate. A relatively new sputtering technique is the HiPIMS (High Power Impulse Magnetron Sputtering) which uses extremely high energy pulses with power density to enable higher performance and denser films. In the present work, chromium nitride (CrN) films were deposited by two magnetron sputtering techniques, HiPIMS and DCMS (Direct Current Magnetron Sputtering), varying the pulse frequency at 400 Hz, 450 Hz and 500 Hz for the HiPIMS and the bias at 0 V, -20 V, -40 V, -60 V, -100 V and -140 V for both processes. It was obtained films with high hardness, less roughness for HiPIMS, however DCMS presented a higher rate of deposition. The increase of the frequency in the HiPIMS films, as well as the increase of the negative polarization voltage, allowed films with denser and homogeneous morphology. This fact was also observed with the increase of the value in the films deposited by DCMS. The hardness values obtained (17 ± 2 for DCMS and 26 ± 1 for HiPIMS) were higher than those reported in the literature and may be related to the \"multilayer\" effect obtained by substrate oscillation.
8

Filmes finos de carbono depositados por meio da técnica de magnetron sputtering usando cobalto, cobre e níquel como buffer-layers / Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers

Silva, Danilo Lopes Costa e 02 July 2015 (has links)
Neste trabalho, foram produzidos filmes finos de carbono pela técnica de magnetron sputtering usando substratos monocristalinos de alumina com plano-c orientado em (0001) e substratos de Si (111) e Si (100), empregando Co, Ni e Cu como filmes intermediários (buffer-layers). As deposições foram conduzidas em três etapas, sendo primeiramente realizadas com buffer-layers de cobalto em substratos de alumina, onde somente após a produção de grande número de amostras, foram então realizadas as deposições usando buffer-layer de cobre em substratos de Si. Em seguida foram realizadas as deposições com buffer-layers de níquel em substratos de alumina. A cristalinidade dos filmes de carbono foi avaliada por meio da técnica de espectroscopia Raman e complementarmente por difração de raios X (DRX). A caracterização morfológica dos filmes foi feita por meio da microscopia eletrônica de varredura (MEV E FEG-SEM) e microscopia eletrônica de transmissão de alta resolução (HRTEM). Picos de DRX referentes aos filmes de carbono foram observados apenas nos resultados das amostras com buffer-layers de cobalto e de níquel. A espectroscopia Raman mostrou que os filmes de carbono com maior grau de cristalinidade foram os produzidos com substratos de Si (111) e buffers de Cu, e com substratos de alumina com buffer-layers de Ni e Co, tendo este último uma amostra com o maior grau de cristalinidade de todas as produzidas no trabalho. Foi observado que o cobalto possui menor recobrimento sobre os substratos de alumina quando comparado ao níquel. Foram realizados testes de absorção de íons de Ce pelos filmes de carbono em duas amostras e foi observado que a absorção não ocorreu devido, provavelmente, ao baixo grau de cristalinidade dos filmes de carbono em ambas amostras. / In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer-layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, complementarily, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples.
9

Estudo das propriedades óticas e elétricas de filmes finos de óxido de zinco / STUDY OF THE OPTICAL AND ELECTRIC PROPERTIES OF ZINC OXIDE THIN FILMS

Renato Vasconcelos Coura Soares 20 April 2018 (has links)
O desenvolvimento de filmes finos e nanotecnologia tem proporcionado imensos avanços nas áreas científicas e tecnológicas. A nanotecnologia, em sua essência, não pode ser considerada como uma simples redução das dimensões das propriedades dos materiais. Na verdade surgem novas propriedades que não podem ser caracterizadas por técnicas convencionais. Assim surgiram novos sistemas que são empregados na identificação destas novas propriedades e características. Muitas vezes os avanços tecnológicos que podem ser observados no dia a dia são frutos de pesquisas que foram recentemente realizadas. A demanda por óxidos condutores transparentes (TCO) para aplicações em optoeletrônicos, tais como painéis de toque, monitores de tela plana, diodos orgânicos emissores de luz (OLEDs) e outros dispositivos móveis, tem aumentado continuamente e se enquadram neste desenvolvimento. O objetivo desse trabalho é analisar filmes finos de óxido de zinco produzidos por magnetron sputtering. Procuramos quais filmes de óxido de zinco possuem as melhores características de um TCO. Após esta análise temos condições de determinar quais foram os melhores parâmetros de deposição para a construção do filme de óxido de zinco. Os filmes finos foram analisados por: Rutherford backscatering spectroscopy (RBS), CxV, IxV, Efeito Hall, Interferômetria e Espectofotômetria UV-Vis-NIR. / can not be considered as a simple reduction of dimensions and scaling of material properties. In fact, CxV, flat panel monitors, Hall Effect, Interferometry and UV-Vis-NIR Spectrophotometry., has continuously increased and fits into this development. The objective of this work is to analyze thin films of zinc oxide, in its essence, induced by magnetron sputtering. We look for which zinc oxide film have the best characteristics for a TCO. From these results it is possible to concl, IxV, new properties that arise can not be characterized by conventional techniques. Thus new systems have emerged which are employed in the identification , organic light emitting diodes (OLEDs) and other mobile devices, such as touch panels, The development of thin films and nanotechnology has provided immense advances in scientific and technological areas. Nanotechnology
10

Estudo das propriedades óticas e elétricas de filmes finos de óxido de zinco / STUDY OF THE OPTICAL AND ELECTRIC PROPERTIES OF ZINC OXIDE THIN FILMS

Soares, Renato Vasconcelos Coura 20 April 2018 (has links)
O desenvolvimento de filmes finos e nanotecnologia tem proporcionado imensos avanços nas áreas científicas e tecnológicas. A nanotecnologia, em sua essência, não pode ser considerada como uma simples redução das dimensões das propriedades dos materiais. Na verdade surgem novas propriedades que não podem ser caracterizadas por técnicas convencionais. Assim surgiram novos sistemas que são empregados na identificação destas novas propriedades e características. Muitas vezes os avanços tecnológicos que podem ser observados no dia a dia são frutos de pesquisas que foram recentemente realizadas. A demanda por óxidos condutores transparentes (TCO) para aplicações em optoeletrônicos, tais como painéis de toque, monitores de tela plana, diodos orgânicos emissores de luz (OLEDs) e outros dispositivos móveis, tem aumentado continuamente e se enquadram neste desenvolvimento. O objetivo desse trabalho é analisar filmes finos de óxido de zinco produzidos por magnetron sputtering. Procuramos quais filmes de óxido de zinco possuem as melhores características de um TCO. Após esta análise temos condições de determinar quais foram os melhores parâmetros de deposição para a construção do filme de óxido de zinco. Os filmes finos foram analisados por: Rutherford backscatering spectroscopy (RBS), CxV, IxV, Efeito Hall, Interferômetria e Espectofotômetria UV-Vis-NIR. / can not be considered as a simple reduction of dimensions and scaling of material properties. In fact, CxV, flat panel monitors, Hall Effect, Interferometry and UV-Vis-NIR Spectrophotometry., has continuously increased and fits into this development. The objective of this work is to analyze thin films of zinc oxide, in its essence, induced by magnetron sputtering. We look for which zinc oxide film have the best characteristics for a TCO. From these results it is possible to concl, IxV, new properties that arise can not be characterized by conventional techniques. Thus new systems have emerged which are employed in the identification , organic light emitting diodes (OLEDs) and other mobile devices, such as touch panels, The development of thin films and nanotechnology has provided immense advances in scientific and technological areas. Nanotechnology

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