ABSTRACT
In this study, the reactive rf magnetron sputtering was used to deposit (Ba,Sr)(Ti,Zr)O3 (BSTZ) thin films on Pt/SiO2/Si substrate. The optimal sputtering parameters were found to be RF power of 160W¡Bsputtering pressure of 10 mTorr¡Bsubstrate temperature of 580¢XC and oxygen concentration (O2/O2+Ar) of 40%.
The physical characteristics of BSTZ thin films deposited on Pt/SiO2/Si substrate with different sputtering parameters were obtained by the analyses of XRD, SEM and AFM. The characteristics and dielectric constant of thin films were discussed. The electrical properties of BSTZ thin films using HP4194A and HP4156C semiconductor parameters analyzer were estimated through the measurement of leakage current on MIM structure. The dependences of dielectric constants on applied voltage¡Bfrequency and temperature were discussed.
From the experimental results, it reveals that the dielectric constant with optimal sputtering parameters was about 191, and the leakage current of thin film was about 3x10-8 A/cm2 when the applied electrical field of thin film was at 0.1 MV/cm. Besides, the Curie temperature (Tc) of BSTZ thin film was confirmed to be about 20¢XC and the dielectric constants of BSTZ thin films exhibited little change under different temperature(0~80¢XC) and frequency (~1MHz).
* student ** advisor
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0626103-222655 |
| Date | 26 June 2003 |
| Creators | Wang, Chia-Jung |
| Contributors | none, none, none, none, none |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626103-222655 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0024 seconds