ABSTRACT In this study, the reactive rf magnetron sputtering was used to deposit (Ba,Sr)(Ti,Zr)O3 (BSTZ) thin films on Pt/SiO2/Si substrate. The optimal sputtering parameters were found to be RF power of 160W¡Bsputtering pressure of 10 mTorr¡Bsubstrate temperature of 580¢XC and oxygen concentration (O2/O2+Ar) of 40%. The physical characteristics of BSTZ thin films deposited on Pt/SiO2/Si substrate with different sputtering parameters were obtained by the analyses of XRD, SEM and AFM. The characteristics and dielectric constant of thin films were discussed. The electrical properties of BSTZ thin films using HP4194A and HP4156C semiconductor parameters analyzer were estimated through the measurement of leakage current on MIM structure. The dependences of dielectric constants on applied voltage¡Bfrequency and temperature were discussed. From the experimental results, it reveals that the dielectric constant with optimal sputtering parameters was about 191, and the leakage current of thin film was about 3x10-8 A/cm2 when the applied electrical field of thin film was at 0.1 MV/cm. Besides, the Curie temperature (Tc) of BSTZ thin film was confirmed to be about 20¢XC and the dielectric constants of BSTZ thin films exhibited little change under different temperature(0~80¢XC) and frequency (~1MHz). * student ** advisor

In this thesis, the reactive rf magnetron sputtering was used to deposit (Ba,Sr)(Ti,Zr)O3 (BSTZ) thin films on Pt/Ti/SiO2/Si substrate with the optimal parameters. The post-treatments of rapid thermal annealing (RTA), conventional thermal annealing (CTA), O2 plasma, N2 plasma, and N2O plasma respectively were used to promote the dielectric characteristics. The physical characteristics of BSTZ thin films were obtained by the analyses of XRD, SEM, and AFM. The influences of post-treatments on thin films were discussed. The electrical properties of BSTZ thin films were estimated through the measurement of leakage current on MIM structure with HP4194A and HP4156C semiconductor parameters analyzer. Also, the dependences of dielectric constants on applied voltage were discussed. After annealing treatments, the dielectric constants were increased and the leakage currents were decreased respectively. But with the higher annealing temperature of CTA, the larger leakage currents were obtained. In the different atmosphere of plasma treatments, the leakage currents were decreased obviously. The dielectric constant was about 295 after O2 plasma treatment of 6 minutes succeeded with RTA at 600¢J for 2 minutes¡F it reveals that the leakage current was about 1.38x10-9 A/cm2 under the applied electrical field of 0.1 MV/cm. Therefore, to combine the annealing and plasma treatments properly could increase the dielectric characteristics effectively.