In this study, metal-oxide-semiconductor (MOS) capacitances were prepared with rf magnetron sputtering of Ta2O5 on both n-type GaN and p-type GaN. And metal-insulator-semiconductor (MIS) capacitances were prepared with conjugated rigid-rod polymers PBT on n-type GaN. The processes of fabrication the diodes were shown, and the structures of MOS/MIS diodes were represented. Hysteresis was observed in high-frequency capacitance-voltage (C-V) measurements. And the hysteresis was changed with different scanning delay time on scanning step. They were ascribed to mobile charges and interface charges. The carrier concentration were calculated and compared with the Hall results. The flatband voltage and threshold voltage were calculated and compared with C-V curves which were measured.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0629101-151828 |
| Date | 29 June 2001 |
| Creators | Tsao, Pai-Hua |
| Contributors | Ikai Lo, Li-Wei Tu, Yant Lu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629101-151828 |
| Rights | withheld, Copyright information available at source archive |
Page generated in 0.0024 seconds