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Monolithic-Microwave Integrated-Circuit Design of Hetero-Junction Bipolar Transistor Power Amplifier for Wireless Communications

Using GaAs HBT provided by AWSC to construct Gummel
Poon static model.then using the GaAs HBT processing
of GCS to design MMIC power amplifier for the 1.9~2.0
GHz PCS system. This power amplifier exhibits an output
power of 27dBm and a power added efficiency as high as
32% at an operation voltage of 3.4V.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0701100-175055
Date01 July 2000
CreatorsLi, Jian-Yu
ContributorsSheng-Fuh Chang, Tzong-Lin Wu, Huey-Ru Chuang, Tzyy-Sheng Horng
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701100-175055
Rightsunrestricted, Copyright information available at source archive

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