¡@¡@A high efficient packaging technique was proposed for power InGaN light emitting diodes( LEDs ).In this approach , sub-mounts based on Si bench technology were used to provide a fact heat conducting channel between the LEDs and the cases.Two different structures of the Si sub-mounts were used, namely, a conventional Si block and a Si block with a copper-filled V-groove.
¡@¡@The thermal resistance of the two different sub-mounts were measured and compared. For a 45mil power LED biased at 1W, thermal resistance of 12.77¢J/W and 18.79¢J/W were measured for the Si sub-mount and the Si sub-mount with copper-filled V-groove. We believe the better thermal resistance of the sub-mount with copper-filled V-groove is due to high thermal conductivity of the copper.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0701110-145047 |
| Date | 01 July 2010 |
| Creators | Huang, Hui-sheng |
| Contributors | Chao-Kuei Lee, Yi-Jen Chiu, Jau-Sheng Wang, Ann-Kuo Chu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701110-145047 |
| Rights | not_available, Copyright information available at source archive |
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