The main work of this thesis is to design the TE-polarized SOA structures for booster amplifier, and the polarization-independent SOA structures for preamplifier at receiver end.
In the SOA structure, we add a lattice-matched ternary compound InGaAs as an extra quantum well in separate-confinement heterostructure (SCH) layer. The purpose is to result in the band-filling/shrinkage and lead to change the absorption coefficient. Therefore, the refractive index change will be increased, and the structure can work as a Mach-Zehnder interferometer under reverse bias.
We also added an electron barrier InAlAs layer to reduce the carriers accumulation in the extra InGaAs QW. After the epitaxy of MOCVD, this designed structure was processed to be a ridge laser. From the measurements of ridge laser, the barrier InAlAs could not efficiently stop the carrier injection into the extra InGaAs QW.
The other part of this thesis is to set up a digital signal apparatus to analyze the RHEED pattern on the screen of the chamber. We make a connection between CCD camera and PC utilizing the framegrabber in RHEED system, and develop the programs from LabVIEW and IMAQ to obtain the functions we need. Further, from the tests of grabing and analysis for RHEED pattern, the digital signal system on RHEED pattern has been successfully demonstrated.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0708104-022316 |
| Date | 08 July 2004 |
| Creators | Hsu, Chih-ming |
| Contributors | Jyh-Shyang Wang, Wen-Jeng Ho, Tao-Yuan Chang, Tsong-Sheng Lay, San-Liang Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708104-022316 |
| Rights | restricted, Copyright information available at source archive |
Page generated in 0.0022 seconds