In order to improve the stability of interface between the solar cell (CuInSe2) and the substrate, such as reducing the lattice misfit and the number of defects at the interface, we used the Solid Phase Epitaxy (SPE) method to grow epitaxial germanium film as the substrate of solar cell. The experiment tried three different film structures. The first structure was sequential sputtering an amorphous silicon film and a germanium film on the silicon wafer. The next one was sputtering an amorphous germanium film on the bare silicon wafer. The last, called mixed step structure, was co-sputtering the amorphous silicon and germanium films by changing the sputtering power and time. After the recrystallization of amorphous films by rapid thermal process, x-ray diffraction patterns were performed to characterize the crystallinity of the processed films. The experimental results appeared that the epitaxy of amorphous films was not successful and that there was only polycrystalline films formed. TEM images of the processed amorphous films showed that there existed a thin native oxide layer at the interface between the silicon substrate and the polycrystalline films. The thin oxide layer (less than 10 nm) caused the epitaxy of amorphous films not to proceed.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0715104-101346 |
| Date | 15 July 2004 |
| Creators | Lin, Ya-Shu |
| Contributors | Bae-Heng Tseng, Mau-Phon Houng, Der-shin Gan, Huey-Liang Hwang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715104-101346 |
| Rights | restricted, Copyright information available at source archive |
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