The traditional displayer ¡V CRT has already been substituted by liquid crystal displayer (LCD).The a-Si TFT is used to be a switch, while the size of the displayer increases, the require of the performance and quality of TFTs is more and more better. Therefore, it is very important subject to study the stability and to improve the performance of a-Si TFTs.
In this study, it simulated the process of the degradation on the TFTs by changing the sizes of TFTs and bias modes to find to stability mechanism of the TFTs. It can be known that under AC stress the degradation depends on the channel length, longer channel length with less degradation.
In order to improve the traditional dual-gate structure TFTs, it had made dual-gate TFTs with ITO back-gate, the process of the new structure TFTs are fully compatible with the conventional BCE TFT fabrication process. With dual-channel conduction, the dual-gate TFTs exhibit higher on current and lower photo leakage current performance than the conventional inverted staggered TFTs
In this study it also use the dual-gate structure to investigate how the back-channel influence the front-channel conduction. Apply DC bias on the back-gate to from defects at the interface of the active layer and passvation layer, it is found that after stress the on-current show almost the same quantities, and the photo leakage current is obvious decreased.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0720106-151919 |
| Date | 20 July 2006 |
| Creators | Shih, Chih-hsien |
| Contributors | Chih-Hsiung Liao, Wang-Chuang Kuo, Wei-Chou Hsu, Ting-chang Chang, Herng-Yih Ueng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-151919 |
| Rights | not_available, Copyright information available at source archive |
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