Semiconductor technology has already got into nanometer scale. As the dimension keeping scaling down, we can get more transistor in the same area, and furthermore the frequency and performance are also enhanced. But nowadays the development of the lithography technology has come to the neck, we must find another way to improve the performance of transistor. The reliability is more important in the shorter and shorter device channel. In this study, we fully discuss the electrical characteristics of the hot carrier effect at various temperature of 65nm MOSFETs under external mechanical stress.
In order to strain the channel, silicon substrate is bent by applying external mechanical stress, the lattice of channel will be strained after applying uniaxial tensile stress. Therefore, we successfully improve drain current and carrier mobility of NMOS, but the hot carrier effect is more serious.
In addition, we can understand the influence of hot carrier effect on strain silicon by bending silicon substrate with external mechanical stress. With the increase of curvature, substrate current goes up. We offer an explanation to verify this result.
The temperature effect is also measured. The drain current and mobility increased with the temperature decreasing, but the substrate current increased with temperature increasing.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0724107-210028 |
| Date | 24 July 2007 |
| Creators | Kuo, Chun-ting |
| Contributors | Po-Tsun Liu, Ting-chang Chang, Ying-Lang Wang, Tzu-Ming Cheng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724107-210028 |
| Rights | not_available, Copyright information available at source archive |
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