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Analysis of Mg-doped GaN thin film grown by PAMBE

We grew Mg-doped of GaN on GaN template by plasma-assisted molecular beam epitaxy (PAMBE) and measured these samples by Hall measurement, I-V curve measurement, PL, Raman scattering, SEM and AFM.
The results of Hall measurement of these samples showed that the conducting type is n-type. However, I-V measurement showed these samples to have a behavior of p-n junction between Mg-doped GaN film and GaN template. For optical properties, Raman scattering spectrum did not detect a peak at 656 cm-1 which indicates Mg-N vibration; PL measurement showed the emission peak of growing samples shifted 0.03eV toward to low photon energy. The results of surface analysis showed a smooth surfaces at Ga droplet area while many pin hole was formed at ¡§dry¡¨ area. Those pin hole could be inversion domain. Futher study is going.
Based on electrical, optcial, and surface analysis, the Mg-doped GaN thin film has been successful obtained by MBE. However, the hole concentration of these samples is so low that results in difficulty for Hall and Raman scatting measurement.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0803110-143146
Date03 August 2010
CreatorsChen, Yu-hao
ContributorsKuang-Yeu Hsieh, Ming-Kwei Lee, Ikai Lo
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146
Rightswithheld, Copyright information available at source archive

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