We grew Mg-doped of GaN on GaN template by plasma-assisted molecular beam epitaxy (PAMBE) and measured these samples by Hall measurement, I-V curve measurement, PL, Raman scattering, SEM and AFM.
The results of Hall measurement of these samples showed that the conducting type is n-type. However, I-V measurement showed these samples to have a behavior of p-n junction between Mg-doped GaN film and GaN template. For optical properties, Raman scattering spectrum did not detect a peak at 656 cm-1 which indicates Mg-N vibration; PL measurement showed the emission peak of growing samples shifted 0.03eV toward to low photon energy. The results of surface analysis showed a smooth surfaces at Ga droplet area while many pin hole was formed at ¡§dry¡¨ area. Those pin hole could be inversion domain. Futher study is going.
Based on electrical, optcial, and surface analysis, the Mg-doped GaN thin film has been successful obtained by MBE. However, the hole concentration of these samples is so low that results in difficulty for Hall and Raman scatting measurement.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0803110-143146 |
| Date | 03 August 2010 |
| Creators | Chen, Yu-hao |
| Contributors | Kuang-Yeu Hsieh, Ming-Kwei Lee, Ikai Lo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146 |
| Rights | withheld, Copyright information available at source archive |
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