The goal of this thesis is to grow GaN/InGaN double- heterojunction (DH) nanorods through the technique of molecular beam epitaxy (MBE), and fabrication nano-LEDs. Images of scanning electron microscopy (SEM) show the high density nanorods (1010 cm-2) have hexagonal symmetry. Results of X-ray diffraction (XRD), and Energy Dispersive Spectrometer (EDS) show that the InGaN layer is grown successfully. Cathodo-luminescence (CL) measurements will be presented.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0813107-155526 |
| Date | 13 August 2007 |
| Creators | Lin, Yuan-ting |
| Contributors | Tsu-Chiang Yen, Li-Wei Tu, Min-Hsiung Tsai, Quark Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0813107-155526 |
| Rights | not_available, Copyright information available at source archive |
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