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Narrow-Divergence Ridge Waveguide Laser

Abstract
We use InGaAlAs and InGaAsP as materials of 1.55mm multi-quantum-well spot-size converter ridge waveguide lasers. On lateral conversion, we fabricate a taper ridge waveguide. On vertical conversion, we add guard layers on each side of active layer.
For InGaAlAs ridge waveguide lasers, simulation results show a far field 16o ¡Ñ 27o¡]lateral ¡Ñ vertical¡^at guard layer width S = 0.1 mm with 300-150-50 mm narrow-tapered waveguide structure.
Due to large Zn background contamination in the MOCVD growth chamber, we did not fabricate the InGaAlAs lasers successfully. For the InGaAsP ridge waveguide lasers, we measure a far field 18o ¡Ñ 28o and a threshold current 23 mA for the 200-250-50 mm narrow-tapered waveguide structure; a far field 20o ¡Ñ 26o and a threshold current 22 mA for the 200-250-50 mm wide-tapered waveguide structure.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0825100-120951
Date25 August 2000
CreatorsLeaow, Yi-Hong
ContributorsWood-Hi Cheng, Tien-Tsorng Shin, Szu-Chun Wang, Tsong-Sheng Lay
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0825100-120951
Rightsunrestricted, Copyright information available at source archive

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