In this study, The bottom electrode¡]TiN¡^, middle insulator ¡]Sn¡GSiO2¡^, and top electrode ¡]Pt¡^ were deposited respectively by sputtering technique for fabricating the resistive random access memory with metal-insulator-metal structure. Experimental results were indicated that Sn-dopped SiO2 RRAM could be operated over 105 times and retention time was kept stable at thermal stress up to 85 ¢J over 104 s.
In the previous researches, we had known that the supercritical carbon dioxide¡]SCCO2¡^ fluids could efficiently to passivate the traps in the devices. The leakage current of dielectric film would be reduced significantly after SCCO2 fluids treatment. To improve the dielectric properties of Sn-dopped SiO2 films, the SCCO2 fluids technology was introduced in this study. After SCCO2 fluids treatment, the leakage current of devices was reduced significantly, because the HRS conduction mechanism was transformed from Poole-Frenkel conduction to Schottky emission and the LRS conduction mechanism was transformed from Ohmic conduction to Hopping conduction. Addtionally, RTA treatment was introduced to improve the Sn-dopped SiO2 films. It could also reduce leakage current of devices after RTA treatment. At last, we used constant current forming to find the process of electrons hopping conduction.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0826111-031558 |
| Date | 26 August 2011 |
| Creators | Liao, Kuo-Hsiao |
| Contributors | Der-Shin Gan, Ting-Chang Chang, Tsung-Ming Tsai |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826111-031558 |
| Rights | user_define, Copyright information available at source archive |
Page generated in 0.1008 seconds