This article focuses on ¡§Floating Body Effect¡¨ of PD-SOI (partial depletion silicon-on-insulator), because the conventional PD-SOI 1T DRAM (one transistor of dynamic random access memory) cell can¡¦t be held impact ionization produced carriers efficiently, so it is unable to provide reliable programming window. In this article, we propose a new device with its special structure, besides adding ¡§Block Oxide¡¨ to the two sides of device body to strengthen ¡§kink effect¡¨, we also add a negative bias to the beneath electrode which is located in the bottom of U-cave of this device, this design can manipulate ¡§kink effect¡¨ more feasibly, and guarantee the hole-held ability. Those points can improve performance of PD-SOI 1T DRAM cell greatly.
The new SOI device contains four advantages in the below:
1. Exploiting conventional bulk Si-wafer for manufacture, no expensive SOI wafer needs.
2. Increasing programming window of 1T DRAM cell greatly.
3. Preventing ¡§Pinch off¡¨ occurs in source and drain depletion region.
4. Reducing the junction capacitor of Source-Body and Drain-Body.
We use simulation tool, ISE TCAD 10.0 to simulate structure of this new device, and do I-V characteristic electric analyze to this device. In the manufacture, thanks for the equipment and facility of NDL (National Device Laboratory); we apply to this resource to realize our devices.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0830107-143701 |
| Date | 30 August 2007 |
| Creators | Liu, Cheng-Heng |
| Contributors | Yao-Tsung Tsai, Ting-Chang Chang, James B. Kuo, Jyi-Tsong Lin, Ming-Kwei Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0830107-143701 |
| Rights | not_available, Copyright information available at source archive |
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