As the time goes by, the more computers become advance, the more heat they produce. If the heat sink of electronic device is not good enough to remove the heat, the electric circuit can be destroyed due to the overheat. This thesis discusses a possible heat sink making of diamond thin layer. Appling the sputtering, Cu thin film has deposited on CVD diamond film, and applying electroplate coating, the thickness of Cu film has increased to 100 µm. In this work a satisfied coating condition has been found to deposite Cu film on diamond, such as: substrate temperature at 300 ¢J, the RF power at 100 Watt and vapor pressure at 2 mTorr for the RF sputtering of Cu on diamond. Using scratch test and pull-off test the adhesion of Cu on diamond has been analyzed to have an adhesive force of 1.9 kg/cm2.Through the simulation with FEMLAB, the finite element method, heat flux, thermal convection and temperature gradient have been simulated. A best thickness of the diamond thin film has been found to be no more thick than 100 µm for the heat sink device.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0911106-150016 |
| Date | 11 September 2006 |
| Creators | Chen, Shin-bau |
| Contributors | Chii Ruey Lin, Ting-Chang Chang, Yuang-Cherng Chiou, Tai-Fa Young |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911106-150016 |
| Rights | restricted, Copyright information available at source archive |
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