The method Atomic Layer Deposition, ALD, has been available since the 1970´s and it has opened the possibility to fabricate methods for inorganic thin films on a nanoscale. Later the interest for fabricating organic thin films with Molecular Layer Deposition, MLD, and controlling both the thickness and the composition of the film on a molecular scale. To develop the thin films a bit further a combination of organic and inorganic thin films is fabricated and therefore the best properties of the two types of thin films are combined. The purpose of this bachelor´s thesis was to fabricate the multilayer thin film AlN-HQ on a silicon substrate. It began with a substantial review of the literature and planning of the approach. Followed by the laboratory work with fabricating the thin film by ALD. The laboratory work ended with analyzing the thin films by ATR-FT/MIR (attenuated total reflectance fourier transform mid-infrared spectroscopy) and XRR (X-ray reflectivity). All data provided where summarized and evaluated. An analysis of the thickness of the thin film was attempted with XRR but was not adequate for these samples. For a development of the method fabrication of the multilayer film AlN-HQ the thickness needs to be known. It could probably be analyzed by Scanning Electron Microscopy, SEM, but that type of analysis was not a part of this study.
| Identifer | oai:union.ndltd.org:UPSALLA1/oai:DiVA.org:liu-176218 |
| Date | January 2021 |
| Creators | Karlsson, Matilda |
| Publisher | Linköpings universitet, Institutionen för fysik, kemi och biologi |
| Source Sets | DiVA Archive at Upsalla University |
| Language | Swedish |
| Detected Language | English |
| Type | Student thesis, info:eu-repo/semantics/bachelorThesis, text |
| Format | application/pdf |
| Rights | info:eu-repo/semantics/openAccess |
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