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Modeling and analysis of thick suspended deep x-ray liga inductors on CMOS/BiCMOS substrate

Modeling and simulation results for two types of 150 μm height air suspended inductors proposed for LIGA fabrication are presented. The inductor substrates used model the TSMC 0.18 μm CMOS/BiCMOS substrates. The RF performance between the suspended structure and the unsuspended counterpart are compared and the advantage of the suspended structures is explored. The potential of LIGA for fabricating high suspended inductors with good performance and for combining these with CMOS/BiCMOS is demonstrated.

Identiferoai:union.ndltd.org:USASK/oai:usask.ca:etd-07312006-101710
Date02 August 2006
CreatorsYu, Xiaoyang
ContributorsKlymyshyn, David M.
PublisherUniversity of Saskatchewan
Source SetsUniversity of Saskatchewan Library
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://library.usask.ca/theses/available/etd-07312006-101710/
Rightsunrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to University of Saskatchewan or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.

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