This study examined the adsorption of elemental S onclean Si(lOO) surfaces and Cs on s- covered Si(lOO) surfaces. The study was performed in an UHV system using LEED, AES and WF measurements. The objective was the protection of the\ surface against degradation. The s adsorption process may be enhanced by the addition of Cs. Results indicate that S adsortion forms: a hemisulfide, (~0.5 ML) with a (2xl) structure and a monosulfide, (~1 ML) with a (lxl) structure. Adsorption of Cs on clean Si(100)2xl reduces the WF to a minimum value with a subsequent increase towards the value of metallic Cs. Preadsorption of Son Si(100)2xl lowers the WF to a final plateau without the increase. The presence of S increases the binding energy and the maximum amount of Cs that can be deposited on the Si(lOO) surface. Structural models for S and Cs on Si(lOO) surfaces have been given in the text.
| Identifer | oai:union.ndltd.org:auctr.edu/oai:digitalcommons.auctr.edu:dissertations-4705 |
| Date | 01 June 1995 |
| Creators | Papageorgopoulos, Aristomenis |
| Publisher | DigitalCommons@Robert W. Woodruff Library, Atlanta University Center |
| Source Sets | Atlanta University Center |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | ETD Collection for AUC Robert W. Woodruff Library |
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