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Optical studies of calcium arsenide, heavily doped with phosphorus by ion-implantation.

by Mok Wing Keung. / Parallel title in Chinese characters. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1992. / Includes bibliographical references (leaves 149-154). / Acknowledgement --- p.i / Abstract --- p.ii / Table Of Contents --- p.iii / List Of Figures --- p.v / List Of Tables --- p.ix / List Of Plates --- p.x / Chapter Chapter One --- Introduction / Chapter 1.1 --- General introduction --- p.1 / Chapter 1.2 --- Gallium arsenide --- p.4 / Chapter 1.2.1 --- Basic facts --- p.4 / Chapter 1.2.2 --- Band structure --- p.6 / Chapter 1.2.3 --- Production of GaAs --- p.9 / Chapter 1.3 --- Ion implantation --- p.11 / Chapter 1.3.1 --- Principle of ion implantation --- p.11 / Chapter 1.3.2 --- Basic facts --- p.17 / Chapter 1.3.3 --- Radiation damage and annealing --- p.21 / Chapter 1.4 --- Optical measurements --- p.27 / Chapter 1.4.1 --- Basic facts --- p.27 / Chapter 1.4.2 --- Optical reflectance --- p.29 / Chapter 1.4.3 --- Oxide overlayer --- p.39 / Chapter Chapter Two --- Experimental / Chapter 2.1 --- Sample preparation --- p.42 / Chapter 2.2 --- Ion implantation --- p.46 / Chapter 2.2.1 --- Implantation parameters --- p.46 / Chapter 2.2.2 --- Computer modeling of implantation profiles --- p.48 / Chapter 2.3 --- Annealing --- p.57 / Chapter 2.3.1 --- Conventional annealing --- p.57 / Chapter 2.3.2 --- Rapid thermal annealing --- p.61 / Chapter 2.4 --- Optical reflectance measurement --- p.69 / Chapter 2.4.1 --- Principle of measurement --- p.69 / Chapter 2.4.1.1 --- Relative reflectance measurement --- p.71 / Chapter 2.4.1.2 --- Absolute reflectance measurement --- p.79 / Chapter 2.4.2 --- Error estimation and data reduction --- p.82 / Chapter 2.4.2.1 --- Error estimation --- p.84 / Chapter 2.4.2.2 --- Data reduction --- p.86 / Chapter 2.5 --- Optical microscopy and photoluminescence --- p.90 / Chapter Chapter Three --- Results And Discussion / Chapter 3.1 --- Surface morphology --- p.93 / Chapter 3.2 --- Optical reflectance measurement --- p.101 / Chapter 3.2.1 --- Reflectance spectrum --- p.101 / Chapter 3.2.1.1 --- Reference mirror --- p.101 / Chapter 3.2.1.2 --- Crystalline GaAs --- p.104 / Chapter 3.2.1.3 --- Implanted GaAs before annealing --- p.108 / Chapter 3.2.1.4 --- Conventional annealed GaAs --- p.115 / Chapter 3.2.1.5 --- Rapid thermal annealed GaAs (proximity) --- p.120 / Chapter 3.2.2 --- Extraction of optical constants --- p.128 / Chapter 3.2.2.1 --- Oxide overlayer --- p.128 / Chapter 3.2.2.2 --- Dielectric function --- p.132 / Chapter 3.3 --- Photoluminescence results --- p.143 / Chapter Chapter Four --- Conclusions And Suggestions For Further Work --- p.147 / References --- p.149

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_318941
Date January 1992
ContributorsMok, Wing Keung., Chinese University of Hong Kong Graduate School. Division of Physics.
PublisherChinese University of Hong Kong
Source SetsThe Chinese University of Hong Kong
LanguageEnglish
Detected LanguageEnglish
TypeText, bibliography
Formatprint, x, 154 leaves : ill. (some col.) ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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