by Yun-hung Ng. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Yun-hung Ng. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgements --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xi / Chapter Chapter 1 --- INTRODUCTION --- p.1 / Chapter 1.1 --- Background of Study --- p.1 / Chapter 1.2 --- General Properties of a-SiNx and a-SiOxNy --- p.1 / Chapter 1.3 --- Common Preparation Methods of a-SiNx and a-SiOxNy --- p.2 / Chapter 1.4 --- Applications of a-SiNx in Microelectronics --- p.4 / Chapter 1.5 --- Applications of a-SiOxNy in Microelectronics --- p.6 / References --- p.8 / Chapter Chapter 2 --- METHODOLOGY --- p.10 / Chapter 2.1 --- Introduction --- p.10 / Chapter 2.2 --- Mott Rule --- p.10 / Chapter 2.3 --- Random Mixture Model --- p.11 / Chapter 2.4 --- Random Bonding Model --- p.12 / Chapter 2.5 --- Hasegawa Model --- p.15 / References --- p.20 / Chapter Chapter 3 --- INSTRUMENTATION --- p.21 / Chapter 3.1 --- X-ray Photoelectron Spectroscopy (XPS) --- p.21 / Chapter 3.1.1 --- Fundamental Theory of XPS --- p.21 / Chapter 3.1.2 --- Qualitative Analysis using XPS --- p.25 / Chapter 3.1.2.1 --- Chemical Shift --- p.25 / Chapter 3.1.2.2 --- Angular Effect on XPS --- p.28 / Chapter 3.1.2.3 --- Valence Band Investigation --- p.28 / Chapter 3.1.3 --- Quantitative Analysis using XPS --- p.30 / Chapter 3.1.4 --- Instrumental Setup of XPS --- p.33 / Chapter 3.2 --- Ultraviolet Photoelectron Spectroscopy --- p.37 / Chapter 3.2.1 --- Basic Theory of UPS --- p.37 / Chapter 3.2.2 --- Instrumentation --- p.38 / References --- p.41 / Chapter Chapter 4 --- SHORT RANGE ORDER OF a-SiNx --- p.42 / Chapter 4.1 --- Sample Preparation --- p.42 / Chapter 4.2 --- XPS Analysis of a-SiNx --- p.43 / Chapter 4.2.1 --- Angle Resolved XPS Analysis --- p.43 / Chapter 4.2.2 --- RB Model and RM Model Simulation of a-SiNx --- p.43 / Chapter 4.2.3 --- Intermediate Mixture (IM) Model --- p.50 / Chapter 4.2.4 --- Valence Band Structure of a-SiNx --- p.51 / Chapter 4.3 --- Raman Measurements --- p.54 / Chapter 4.4 --- Photoluminescence of a-SiNx --- p.54 / Chapter 4.5 --- Large Scale Potential Fluctuations in a-SiNx --- p.56 / Chapter 4.6 --- Conclusion --- p.61 / References --- p.62 / Chapter Chapter 5 --- MOTT RULE VERIFICATION OF a-SiOxNy --- p.65 / Chapter 5.1 --- Sample Preparation --- p.65 / Chapter 5.2 --- Validity of Mott Rule on a-SiOxNy --- p.66 / Chapter 5.3 --- Conclusion --- p.73 / References --- p.74 / Chapter Chapter 6 --- SHORT RANGE ORDER OF a-SiOxNy --- p.75 / Chapter 6.1 --- Angle Resolved XPS Analysis --- p.75 / Chapter 6.2 --- Random Bonding Model Simulation of a-SiOxNy --- p.75 / Chapter 6.3 --- Conclusion --- p.79 / References --- p.82 / Chapter Chapter 7 --- CONCLUSIONS --- p.83
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_322908 |
| Date | January 1999 |
| Contributors | Ng, Yun-hung., Chinese University of Hong Kong Graduate School. Division of Chemistry. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English, Chinese |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, xi, 54 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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