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The Global ETD Search service is a free service for researchers
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Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 1 to 10 of 16 (0.077 seconds)Spelling suggestions: "subject:"microelectronics matematerials"" "subject:"microelectronics datenmaterials""
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New organic materials for microelectronics applicationsWright-Williams, Lorna M. 08 1900 (has links)
No description available.
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The thermal degradation of polynorborneneWedlake, Michael Douglas 11 1900 (has links)
No description available.
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Degradation of polymers in chemical mechanical polishingAgarwal, Reena 08 1900 (has links)
No description available.
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Interface mechanics of chemical mechanical polishing for integrated circuit planarizationLevert, Joseph Albert 12 1900 (has links)
No description available.
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Incorporation of air-filled pores/forms in a polyimide/benzocyclobutene matrix using a sacrifical commerical polymer for low K microelectronic applicationsWilliamson, Jaimal Mallory 12 1900 (has links)
No description available.
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Mechanical and dielectric characterization of electronic grade polymers at subambient temperaturesSinno, Bilal 05 1900 (has links)
No description available.
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Stereochemical structure-property relationships in polynorbornene from simulationAhmed, Savant 08 1900 (has links)
No description available.
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| 8 |
study of chemical and electronic properties of silicon nitride and silicon oxynitride thin films =: 氮化硅與氮氧化硅薄膜的化學與電子性質的硏究. / 氮化硅與氮氧化硅薄的化學與電子性質的硏究 / The study of chemical and electronic properties of silicon nitride and silicon oxynitride thin films =: Dan hua gui yu dan yang hua gui bo mo de hua xue yu dian zi xing zhi de yan jiu. / Dan hua gui you dan yang hua gui bo mo de hua xue you dian zi xing zhi de yan jiuJanuary 1999 (has links)
by Yun-hung Ng. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Yun-hung Ng. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgements --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xi / Chapter Chapter 1 --- INTRODUCTION --- p.1 / Chapter 1.1 --- Background of Study --- p.1 / Chapter 1.2 --- General Properties of a-SiNx and a-SiOxNy --- p.1 / Chapter 1.3 --- Common Preparation Methods of a-SiNx and a-SiOxNy --- p.2 / Chapter 1.4 --- Applications of a-SiNx in Microelectronics --- p.4 / Chapter 1.5 --- Applications of a-SiOxNy in Microelectronics --- p.6 / References --- p.8 / Chapter Chapter 2 --- METHODOLOGY --- p.10 / Chapter 2.1 --- Introduction --- p.10 / Chapter 2.2 --- Mott Rule --- p.10 / Chapter 2.3 --- Random Mixture Model --- p.11 / Chapter 2.4 --- Random Bonding Model --- p.12 / Chapter 2.5 --- Hasegawa Model --- p.15 / References --- p.20 / Chapter Chapter 3 --- INSTRUMENTATION --- p.21 / Chapter 3.1 --- X-ray Photoelectron Spectroscopy (XPS) --- p.21 / Chapter 3.1.1 --- Fundamental Theory of XPS --- p.21 / Chapter 3.1.2 --- Qualitative Analysis using XPS --- p.25 / Chapter 3.1.2.1 --- Chemical Shift --- p.25 / Chapter 3.1.2.2 --- Angular Effect on XPS --- p.28 / Chapter 3.1.2.3 --- Valence Band Investigation --- p.28 / Chapter 3.1.3 --- Quantitative Analysis using XPS --- p.30 / Chapter 3.1.4 --- Instrumental Setup of XPS --- p.33 / Chapter 3.2 --- Ultraviolet Photoelectron Spectroscopy --- p.37 / Chapter 3.2.1 --- Basic Theory of UPS --- p.37 / Chapter 3.2.2 --- Instrumentation --- p.38 / References --- p.41 / Chapter Chapter 4 --- SHORT RANGE ORDER OF a-SiNx --- p.42 / Chapter 4.1 --- Sample Preparation --- p.42 / Chapter 4.2 --- XPS Analysis of a-SiNx --- p.43 / Chapter 4.2.1 --- Angle Resolved XPS Analysis --- p.43 / Chapter 4.2.2 --- RB Model and RM Model Simulation of a-SiNx --- p.43 / Chapter 4.2.3 --- Intermediate Mixture (IM) Model --- p.50 / Chapter 4.2.4 --- Valence Band Structure of a-SiNx --- p.51 / Chapter 4.3 --- Raman Measurements --- p.54 / Chapter 4.4 --- Photoluminescence of a-SiNx --- p.54 / Chapter 4.5 --- Large Scale Potential Fluctuations in a-SiNx --- p.56 / Chapter 4.6 --- Conclusion --- p.61 / References --- p.62 / Chapter Chapter 5 --- MOTT RULE VERIFICATION OF a-SiOxNy --- p.65 / Chapter 5.1 --- Sample Preparation --- p.65 / Chapter 5.2 --- Validity of Mott Rule on a-SiOxNy --- p.66 / Chapter 5.3 --- Conclusion --- p.73 / References --- p.74 / Chapter Chapter 6 --- SHORT RANGE ORDER OF a-SiOxNy --- p.75 / Chapter 6.1 --- Angle Resolved XPS Analysis --- p.75 / Chapter 6.2 --- Random Bonding Model Simulation of a-SiOxNy --- p.75 / Chapter 6.3 --- Conclusion --- p.79 / References --- p.82 / Chapter Chapter 7 --- CONCLUSIONS --- p.83
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Chemical-mechanical planarization of lithium gallateTaylor, Andre D. 12 1900 (has links)
No description available.
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| 10 |
Interfacial fluid pressure and pad viscoelasticity during chemical meachanical polishingHight, J. Robert 05 1900 (has links)
No description available.
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