- About
-
The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
Search results
Showing 1 to 10 of 15 (0.106 seconds)Spelling suggestions: "subject:"microelectronics matematerials"" "subject:"microelectronics datenmaterials""
| 1 |
New organic materials for microelectronics applicationsWright-Williams, Lorna M. 08 1900 (has links)
No description available.
|
| 2 |
The thermal degradation of polynorborneneWedlake, Michael Douglas 11 1900 (has links)
No description available.
|
| 3 |
Degradation of polymers in chemical mechanical polishingAgarwal, Reena 08 1900 (has links)
No description available.
|
| 4 |
Interface mechanics of chemical mechanical polishing for integrated circuit planarizationLevert, Joseph Albert 12 1900 (has links)
No description available.
|
| 5 |
Incorporation of air-filled pores/forms in a polyimide/benzocyclobutene matrix using a sacrifical commerical polymer for low K microelectronic applicationsWilliamson, Jaimal Mallory 12 1900 (has links)
No description available.
|
| 6 |
Mechanical and dielectric characterization of electronic grade polymers at subambient temperaturesSinno, Bilal 05 1900 (has links)
No description available.
|
| 7 |
Stereochemical structure-property relationships in polynorbornene from simulationAhmed, Savant 08 1900 (has links)
No description available.
|
| 8 |
study of chemical and electronic properties of silicon nitride and silicon oxynitride thin films =: 氮化硅與氮氧化硅薄膜的化學與電子性質的硏究. / 氮化硅與氮氧化硅薄的化學與電子性質的硏究 / The study of chemical and electronic properties of silicon nitride and silicon oxynitride thin films =: Dan hua gui yu dan yang hua gui bo mo de hua xue yu dian zi xing zhi de yan jiu. / Dan hua gui you dan yang hua gui bo mo de hua xue you dian zi xing zhi de yan jiuJanuary 1999 (has links)
by Yun-hung Ng. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Yun-hung Ng. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgements --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xi / Chapter Chapter 1 --- INTRODUCTION --- p.1 / Chapter 1.1 --- Background of Study --- p.1 / Chapter 1.2 --- General Properties of a-SiNx and a-SiOxNy --- p.1 / Chapter 1.3 --- Common Preparation Methods of a-SiNx and a-SiOxNy --- p.2 / Chapter 1.4 --- Applications of a-SiNx in Microelectronics --- p.4 / Chapter 1.5 --- Applications of a-SiOxNy in Microelectronics --- p.6 / References --- p.8 / Chapter Chapter 2 --- METHODOLOGY --- p.10 / Chapter 2.1 --- Introduction --- p.10 / Chapter 2.2 --- Mott Rule --- p.10 / Chapter 2.3 --- Random Mixture Model --- p.11 / Chapter 2.4 --- Random Bonding Model --- p.12 / Chapter 2.5 --- Hasegawa Model --- p.15 / References --- p.20 / Chapter Chapter 3 --- INSTRUMENTATION --- p.21 / Chapter 3.1 --- X-ray Photoelectron Spectroscopy (XPS) --- p.21 / Chapter 3.1.1 --- Fundamental Theory of XPS --- p.21 / Chapter 3.1.2 --- Qualitative Analysis using XPS --- p.25 / Chapter 3.1.2.1 --- Chemical Shift --- p.25 / Chapter 3.1.2.2 --- Angular Effect on XPS --- p.28 / Chapter 3.1.2.3 --- Valence Band Investigation --- p.28 / Chapter 3.1.3 --- Quantitative Analysis using XPS --- p.30 / Chapter 3.1.4 --- Instrumental Setup of XPS --- p.33 / Chapter 3.2 --- Ultraviolet Photoelectron Spectroscopy --- p.37 / Chapter 3.2.1 --- Basic Theory of UPS --- p.37 / Chapter 3.2.2 --- Instrumentation --- p.38 / References --- p.41 / Chapter Chapter 4 --- SHORT RANGE ORDER OF a-SiNx --- p.42 / Chapter 4.1 --- Sample Preparation --- p.42 / Chapter 4.2 --- XPS Analysis of a-SiNx --- p.43 / Chapter 4.2.1 --- Angle Resolved XPS Analysis --- p.43 / Chapter 4.2.2 --- RB Model and RM Model Simulation of a-SiNx --- p.43 / Chapter 4.2.3 --- Intermediate Mixture (IM) Model --- p.50 / Chapter 4.2.4 --- Valence Band Structure of a-SiNx --- p.51 / Chapter 4.3 --- Raman Measurements --- p.54 / Chapter 4.4 --- Photoluminescence of a-SiNx --- p.54 / Chapter 4.5 --- Large Scale Potential Fluctuations in a-SiNx --- p.56 / Chapter 4.6 --- Conclusion --- p.61 / References --- p.62 / Chapter Chapter 5 --- MOTT RULE VERIFICATION OF a-SiOxNy --- p.65 / Chapter 5.1 --- Sample Preparation --- p.65 / Chapter 5.2 --- Validity of Mott Rule on a-SiOxNy --- p.66 / Chapter 5.3 --- Conclusion --- p.73 / References --- p.74 / Chapter Chapter 6 --- SHORT RANGE ORDER OF a-SiOxNy --- p.75 / Chapter 6.1 --- Angle Resolved XPS Analysis --- p.75 / Chapter 6.2 --- Random Bonding Model Simulation of a-SiOxNy --- p.75 / Chapter 6.3 --- Conclusion --- p.79 / References --- p.82 / Chapter Chapter 7 --- CONCLUSIONS --- p.83
|
| 9 |
Chemical-mechanical planarization of lithium gallateTaylor, Andre D. 12 1900 (has links)
No description available.
|
| 10 |
Interfacial fluid pressure and pad viscoelasticity during chemical meachanical polishingHight, J. Robert 05 1900 (has links)
No description available.
|
Page generated in 0.1114 seconds