Silicon Germanium, SiGe, is an important emerging semiconductor material. In
order to optimize growth techniques for SiGe production, such as Liquid Phase Diffusion,
LPD, or Melt Replenishment Czochralski, a good understanding of the transport
phenomena in the melt is required. In the context of the Liquid Phase Diffusion
growth technique, the transport phenomena of silicon in a silicon-germanium melt has
been explored. Experiments isolating the dissolution and transport of silicon into a
germanium melt have been conducted under a variety of flow conditions. Preliminary
modeling of these experiments has also been conducted and agreement with experiments
has been shown. In addition, full LPD experiments have also been conducted
under varying flow conditions. Altered flow conditions were achieved through the application
of a variety of magnetic fields. Through the experimental and modeling work
better understanding of the transport mechanisms at work in a silicon-germanium
melt has been achieved. / Graduate
| Identifer | oai:union.ndltd.org:uvic.ca/oai:dspace.library.uvic.ca:1828/4003 |
| Date | 05 June 2012 |
| Creators | Armour, Neil Alexander |
| Contributors | Dost, Sadik |
| Source Sets | University of Victoria |
| Language | English, English |
| Detected Language | English |
| Type | Thesis |
| Rights | Available to the World Wide Web |
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