Avalanche photodiodes are the primary choice for photodetection in optical access networks, due to their capacity to meet the current requirements of bandwidth and sensitivity introduced by NG-PON2. This work provides an effective tool for modeling and predicting the operation of an avalanche photodiode, paving the way to making better performing receivers. We employed Lumerical to obtain several steady state and transient parameters for a silicon germanium SACM waveguide avalanche photodiode, where close agreement is illustrated between our findings and measurements reported on fabricated devices. The utility of our work is further demonstrated by implementing and modeling a device, designed to meet certain fabrication specifications, where optimization guidelines are suggested afterwards. By providing an accurate approximation of the avalanche photodiode operation, we offer a cost-effective approach to address the problem of fabricating better devices in optical access networks. The introduced methods can be similarly used for other types of photodiodes, contributing to a vast range of applications. / Graduate

No description available.

A self-consistent, full-band, electrothermal ensemble Monte Carlo device simulation tool has been developed. It is used to study charge transport in bulk GaN, and to design, analyze, and improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) and avalanche photodiodes (APDs). Studies of electron transport in bulk GaN show that both peak electron velocity and saturated electron velocity are higher for transport in the basal plane than along the c-axis. Study of the transient electron velocity also shows a clear transit-time advantage for electron devices exploiting charge transport perpendicular to the c-axis. The Monte Carlo simulator also enables unique studies of transport under the influence of high free carrier densities but with low doping density, which is the mode of transport in AlGaN/GaN HEMTs. Studies of isothermal charge transport in AlGaN/GaN HEMTs operating at high gate bias show a drain current droop with increasing drain-source bias. The cause of the droop is investigated and a design utilizing source- or gate-connected field plate is demonstrated to eliminate the drain current droop. Electrothermal aspects of charge transport in AlGaN/GaN HEMTs are also investigated, and the influence of non-equilibrium acoustic and optical phonons is quantified. The calculated spatial distribution of non-equilibrium phonon population reveals a hot spot in the channel that is localized at low drain-source bias, but expands towards the drain at higher bias, significantly degrading channel mobility. Next, Geiger mode operation of wurtzite GaN-based homojunction APDs is investigated. The influences of dopant profile, active region thickness, and optical absorption profile on single photon detection efficiency (SPDE) are quantified. Simulations of linear mode gain as a function of multiplication region thickness and doping profile reveal that weakly n-type active regions may be exploited to achieve higher avalanche gain, without penalty to either applied bias or active region thickness. A separate absorption and multiplication APD (SAM-APD) utilizing a AlGaN/GaN heterojunction is also investigated. The presence of strong piezo-electric and spontaneous polarization charges at the heterojunction enables favorable electric field profile in the device to reduce dark current, improve excess noise factor, improve quantum efficiency, and improve breakdown probability. To maximize SPDE, a new device structure with a buried absorber is proposed and improved SPDE is demonstrated. Lastly, a new approach for the direct generation of self-sustaining millimeter-wave oscillations is proposed. In contrast to Gunn diodes, which exploit a bulk-like active region, periodic oscillation is achieved in the proposed structures through the creation, propagation and collection of traveling dipole domains supported by fixed polarization charge and the associated two-dimensional electron gas along the plane of a polar heterojunction. Numerical simulation of induced oscillations in a simple triode structure commonly used for AlGaN/GaN HEMTs reveals two distinct modes of self-sustaining millimeter-wave oscillation.

A wide variety of group III-Nitride-based photonic and electronic devices have opened a new era in the field of semiconductor research in the past ten years. The direct and large bandgap nature, intrinsic high carrier mobility, and the capability of forming heterostructures allow them to dominate photonic and electronic device market such as light emitters, photodiodes, or high-speed/high-power electronic devices. Avalanche photodiodes (APDs) based on group III-Nitrides materials are of interest due to potential capabilities for low dark current densities, high sensitivities and high optical gains in the ultraviolet (UV) spectral region. Wide-bandgap GaN-based APDs are excellent candidates for short-wavelength photodetectors because they have the capability for cut-off wavelengths in the UV spectral region (λ < 290 nm). These intrinsically solar-blind UV APDs will not require filters to operate in the solar-blind spectral regime of λ < 290 nm. For the growth of GaN-based heteroepitaxial layers on lattice-mismatched substrates, a high density of defects is usually introduced during the growth; thereby, causing a device failure by premature microplasma, which has been a major issue for GaN-based APDs. The extensive research on epitaxial growth and optimization of Al_x Ga _1-x N (0 ≤ x ≤ 1) grown on low dislocation density native bulk III-N substrates have brought UV APDs into realization. GaN and AlGaN UV <i> p-i-n </i> APDs demonstrated first and record-high true avalanche gain of > 10,000 and 50, respectively. The large stable optical gains are attributed to the improved crystalline quality of epitaxial layers grown on low dislocation density bulk substrates. GaN <i>p-i-n </i> rectifiers have brought much research interest due to its superior physical properties. The AIN-free full-vertical GaN<i> p-i-n </i> rectifiers on<i> n </i>- type 6H-SiC substrates by employing a conducting AIGaN:Si buffer layer provides the advantages of the reduction of sidewall damage from plasma etching and lower forward resistance due to the reduction of current crowding at the bottom<i> n </i> -type layer. The AlGaN:Si nucleation layer was proven to provide excellent electrical properties while also acting as a good buffer role for subsequent GaN growth. The reverse breakdown voltage for a relatively thin 2.5 μm-thick<i> i </i>-region was found to be over -400V.

No description available.

This dissertation describes the development of III-nitride (III-N) bipolar devices for optoelectronic and electronic applications. Research mainly involves device design, fabrication process development, and device characterization for Geiger-mode gallium nitride (GaN) deep-UV (DUV) p-i-n avalanche photodiodes (APDs), indium gallium nitride (InGaN)/GaN-based violet/blue laser diodes (LDs), and GaN/InGaN-based npn radio-frequency (RF) double-heterojunction bipolar transistors (DHBTs). All the epitaxial materials of these devices were grown in the Advanced Materials and Devices Group (AMDG) led by Prof. Russell D. Dupuis at the Georgia Institute of Technology using the metalorganic chemical vapor deposition (MOCVD) technique. Geiger-mode GaN p-i-n APDs have important applications in DUV and UV single-photon detections. In the fabrication of GaN p-i-n APDs, the major technical challenge is the sidewall leakage current. To address this issue, two surface leakage reduction schemes have been developed: a wet-etching surface treatment technique to recover the dry-etching-induced surface damage, and a ledged structure to form a surface depletion layer to partially passivate the sidewall. The first Geiger-mode DUV GaN p-i-n APD on a free-standing (FS) c-plane GaN substrate has been demonstrated. InGaN/GaN-based violet/blue/green LDs are the coherent light sources for high-density optical storage systems and the next-generation full-color LD display systems. The design of InGaN/GaN LDs has several challenges, such as the quantum-confined stark effect (QCSE), the efficiency droop issue, and the optical confinement design optimization. In this dissertation, a step-graded electron-blocking layer (EBL) is studied to address the efficiency droop issue. Enhanced internal quantum efficiency (ɳi) has been observed on 420-nm InGaN/GaN-based LDs. Moreover, an InGaN waveguide design is implemented, and the continuous-wave (CW)-mode operation on 460-nm InGaN/GaN-based LDs is achieved at room temperature (RT). III-N HBTs are promising devices for the next-generation RF and power electronics because of their advantages of high breakdown voltages, high power handling capability, and high-temperature and harsh-environment operation stability. One of the major technical challenges to fabricate high-performance RF III-N HBTs is to suppress the base surface recombination current on the extrinsic base region. The wet-etching surface treatment has also been employed to lower the surface recombination current. As a result, a record small-signal current gain (hfe) > 100 is achieved on GaN/InGaN-based npn DHBTs on sapphire substrates. A cut-off frequency (fT) > 5.3 GHz and a maximum oscillation frequency (fmax) > 1.3 GHz are also demonstrated for the first time. Furthermore, A FS c-plane GaN substrate with low epitaxial defect density and good thermal dissipation ability is used for reduced base bulk recombination current. The hfe > 115, collector current density (JC) > 141 kA/cm², and power density > 3.05 MW/cm² are achieved at RT, which are all the highest values reported ever on III-N HBTs.

Le développement d'un produit portable et performant, tout en limitant les coûts, répond à la croissance du marché de la détection biologique par la méthode de la biochimiluminescence. Cet outil de diagnostic d'hygiène et de qualité en temps réel in situ permet une meilleure sécurité, gestion des risques, traçabilité et surveillance des risques. Cet outil trouvera son application dans les domaines agroalimentaires, médicaux, pharmaceutiques, cosmétologiques, environnementaux (eau, air, surfaces), le tertiaire ou les collectivités. Les intérêts sont industriels, écologiques et économiques, et reflètent le désir de proposer un produit novateur et compétitif sur un marché en plein essor. En effet, la détection de certains contaminants est devenue une priorité dans la gestion des risques microbiologiques. La plupart des méthodes de diagnostic actuelles sont lentes, coûteuses, complexes, et limitées dans leur mise en uvre et leurs résultats. Le diagnostic étant essentiel dans tous les secteurs d'activité, il est impératif d'apporter des solutions alternati ves de détection et de quantification des germes pathogènes ou autre toxiques, par la conception de nouveaux outils d'analyse sur le terrain, en temps réel, avec une rapidité et une sensibilité élevées. Ceci passe par une étude fine des phénomènes de biochimiluminescence (BCL) et par la recherche des différents composants optoélectronique capables de détecter les faibles puissances lumineuses émises. Le projet de conception d'un luminomètre de terrain à base de photodiodes PIN ou avalanche, ou de photomultiplicateurs répond aux besoins de la détection et de la mesure de la puissance lumineuse rayonnée par des réactions spécifique ou non de biochimiluminescence. L'élaboration d'un appareil de mesure portable destiné à la quantification in situ de biomasse ou molécules à l'état de traces est nécessaire à l'exploitation des réactifs. En effet, les appareils existants fournissent une information en RLU (Relative Light Unit, unité arbitraire qui né cessite une comparaison à un étalon connu) et ne donnent pas une information quantifiée directe sur la concentration de l'élément recherché dans l'échantillon testé. Ils ne permettent donc pas d'optimiser la biochimiluminescence sur le terrain. L'objectif de ce travail est de mettre au point une alternative plus performante que les systèmes de détection actuels et qui soit moins onéreuse. / The development of a portable and efficient device, while reducing costs, meets the growing market for biological detection by the method of biochimiluminescence. This diagnostic tool of hygiene and quality in real time in situ allows for better security, risk management, traceability and risk monitoring.This tool will find application in the areas food, medical, pharmaceutical, cosmetic, environmental (water, air and surfaces), the tertiary or communities. Interests are industrial, environmental and economic, and reflect the desire to offer an innovative and competitive device in a booming market.Indeed, the detection of contaminants has become a priority in the management of microbiological hazards. Most current diagnostic methods are slow, costly, complex and limited in their implementation and their results.The diagnosis is essential in all industries, it is imperative to provide alternative solutions for the detection and quantification of pathogens or other toxic by the conception of new analytical tools in situ in real time with speed and high sensitivity. This requires a detailed study of biochimiluminescence (BCL) phenomena and the search for various optoelectronic components capable of detecting low power emitted light.The projet for the conception of a field-luminometer based on avalanche photodiodes, or PIN, or photomultiplier responds to the needs of detecting and measuring the light power radiated by reactions biochimiluminescence specific or not. The development of a portable measuring device for in situ quantification of biomass or molecules trace is necessary for the operation of the reactants.Indeed, existing devices provide information in RLU (Relative Light Units, arbitrary units implying a comparison to a known standard) and do not give a direct quantified information on the concentration of the desired item in the test sample. So, they do not optimize biochimiluminescence field. The objective of this work is to develop an alternative more efficient than current detection systems and is less expensive.

[pt] Detectores de fótons únicos baseados em fotodiodo avalanche (SPADs) são elementos essenciais em aplicações que requerem alta sensibilidade, como comunicações quânticas. É proposto um método para caracterização em tempo real da eficiência de detecção e das probabilidades de contagem de escuro e de pós-pulsos em SPADs através da análise da estatística de tempos entre detecções consecutivas utilizando instrumentação simples com o detector sob condições de operação. O método é então aplicado no monitoramento dos detectores utilizados em um sistema de distribuição quântica de chaves, motivado pela falha de segurança que imperfeições apresentadas pela tecnologia atual de detecção podem acarretar. Em especial, os ataques after-gate e time-shif são implementados e analisados. Uma simulação através do método de Monte-Carlo de um detector de fótons únicos composto por uma associação de diversos SPADs ativados serialmente e precedidos por uma chave óptica ativa é apresentada, visando otimizar a performance de detecção com tecnologia atual no tangente à frequência de gatilho. É reportada ainda a interferência estável entre fótons provenientes de fontes laser atenuadas totalmente independentes, cuja visibilidade é monitorada ao longo do tempo para um enlace implementado sobre duas bobinas de 8,5 km com controle ativo de polarização, passo importante para a tecnologia de repetidores quânticos e para o protocolo para distribuição quântica de chaves independente do aparato de medição. Um medidor de estados de Bell é implementado, utilizando-se óptica linear, com a resposta do sistema verificada para diferentes combinações dos estados preparados em duas estações remotas conectadas à estação central de medição através do canal estabilizado. / [en] DetecSingle-photon detectors based on avalanche photodiodes (SPADs) are key elements in ultra-sensitive applications, such as quantum communication. This thesis presents a method for real-time characterization of the overall detection efficiency, afterpulse and dark count probabilities, based on the analysis of the statistics of times between consecutive detections with simple instrumentation under operational condition. The method is employed for monitoring the SPADs on a quantum key distribution system, to prevent security failures due to side-channel attacks caused by current technology loopholes. The after-gate and time-shift attacks are implemented and analyzed. A Monte-Carlo simulation of a serially-activated association of SPADs, preceeded by an active optical switch, is performed for enhancement of the gating frequency performance with detectors based on current technology. The stable interference between photons from two independent faint laser sources is also reported, with visibility stability monitored over time after an optical link composed by two polarization-controlled 8.5-km fiber spools, a key features for quantum repeater and the measurement device independent quantum key distribution protocols. A Bell states analyzer is implemented with linear optics, and its response is verified for different combination of polarization states received from the remote stations through the stabilized channels.