A new fully integrated wavelength stabilization scheme based on grating-coupled surface-emitting lasers is explored. This wavelength stabilization scheme relies on two gratings. The first grating is fabricated on the p-side of the semiconductor laser in close proximity to the laser waveguide such that it couples light out of the guided mode of the waveguide into a propagating mode in the substrate; this grating is known as the grating coupler. The second grating is fabricated on the n-side of the substrate such that for the stabilization wavelength, this second grating operates in the Littrow condition and is known as the feedback grating. Furthermore with the proper design of the two gratings, the feedback grating will operate under total internal reflection conditions allowing a near unity retro-reflection of the light of the stabilization wavelength. The grating coupler and feedback grating together comprise a dual grating reflector (DGR). The DGR wavelength stabilization scheme is investigated both theoretically by means of numerical modeling and experimentally by integration of a DGR as a wavelength selective reflector into a single quantum well semiconductor laser with a gain peak centered at 975nm. Numerical modeling predicts a peak reflection of approximately 70% including losses and a spectral width of 0.3nm. The integration of a DGR into a semiconductor laser proved both the efficacy of the scheme and also allowed us to experimentally determine the effective reflectivity to be on the order of 62%; the spectral width of light output from these devices is typically on the order of 0.2nm. Furthermore, these devices had light-current characteristic slopes greater than 0.84W/A operating under continuous wave conditions. The DGR was then modified to provide a reflection with two spectral peaks. A semiconductor device incorporating this dual wavelength DGR was fabricated and tested. These devices showed a peak optical power of in excess of 5.5W and a light-current characteristic slope of 0.86W/A in quasi continuous wave operation; these devices also exhibit a large operating current range in which both wavelengths have comparable output powers. Another modified DGR design was investigated for the purpose of providing an even narrower spectral reflection. Devices incorporating this modified design provided an output with a spectral width as narrow as 0.06nm. DGRs were also integrated into an extremely broad area device of an unorthodox geometry; square devices that lase in two orthogonal directions were fabricated and tested. The last idea investigated was combining a DGR wavelength stabilized laser with a tapered semiconductor optical amplifier into a master oscillator power amplifier device, with the optical coupling between the two components provided by identical grating couplers disposed on the p-side surfaces of each of the devices. These master oscillator power amplifiers provide a peak power of 32W when operating under quasi continuous wave operation.

External cavity semiconductor mode-locked lasers can produce pulses of a few picoseconds. The pulses from these lasers are inherently chirped with a predominant linear chirp component that can be compensated resulting in sub-picosecond pulses. External cavity semiconductor mode-locked lasers can be configured as multiwavelength pulse sources and are good candidates for time and wavelength division multiplexing applications. The gain medium in external cavity semiconductor mode-locked lasers is a semiconductor optical amplifier (SOA), and passive and hybrid mode-locked operation are achieved by the introduction of a saturable absorber (SA) in the laser cavity. Pump-probe techniques were used to measure the intracavity absorption dynamics of a SA in an external cavity semiconductor mode-locked laser and the gain dynamics of a SOA for the amplification of diverse pulses. The SOA gain dynamics measurements include the amplification of 750 fs pulses, 6.5 ps pulses, multiwavelength pulses and the intracavity gain dynamics of an external cavity multiwavelength semiconductor mode-locked laser. The experimental results show how the inherent chirp on pulses from external cavity semiconductor mode-locked lasers results in a slow gain depletion without significant fast gain dynamics. In the multiwavelength operation regime of these lasers, the chirp broadens the temporal pulse profile and decreases the temporal beating resulting from the phase correlation among wavelength channels. This results in a slow gain depletion mitigating nonlinearities and gain competition among wavelength channels in the SOA supporting the multiwavelength operation of the laser. Numerical simulations support the experimental results.

This dissertation details work on high repetition rate semiconductor mode-locked lasers. The qualities of stable pulse trains and stable optical frequency content are the focus of the work performed. First, applications of such lasers are reviewed with particular attention to applications only realizable with laser performance such as presented in this dissertation. Sources of timing jitter are also reviewed, as are techniques by which the timing jitter of a 10 GHz optical pulse train may be measured. Experimental results begin with an exploration of the consequences on the timing and amplitude jitter of the phase noise of an RF source used for mode-locking. These results lead to an ultralow timing jitter source, with 30 fs of timing jitter (1 Hz to 5 GHz, extrapolated). The focus of the work then shifts to generating a stabilized optical frequency comb. The first technique to generating the frequency comb is through optical injection. It is shown that not only can injection locking stabilize a mode-locked laser to the injection seed, but linewidth narrowing, timing jitter reduction and suppression of superfluous optical supermodes of a harmonically mode-locked laser also result. A scheme by which optical injection locking can be maintained long term is also proposed. Results on using an intracavity etalon for supermode suppression and optical frequency stabilization then follow. An etalon-based actively mode-locked laser is shown to have a timing jitter of only 20 fs (1Hz-5 GHz, extrapolated), optical linewidths below 10 kHz and optical frequency instabilities less than 400 kHz. By adding dispersion compensating fiber, the optical spectrum was broadened to 2 THz and 800 fs duration pulses were obtained. By using the etalon-based actively mode-locked laser as a basis, a completely self-contained frequency stabilized coupled optoelectronic oscillator was built and characterized. By simultaneously stabilizing the optical frequencies and the pulse repetition rate to the etalon, a 10 GHz comb source centered at 1550 nm was realized. This system maintains the high quality performance of the actively mode-locked laser while significantly reducing the size weight and power consumption of the system. This system also has the potential for outperforming the actively mode-locked laser by increasing the finesse and stability of the intracavity etalon. The final chapter of this dissertation outlines the future work on the etalon-based coupled optoelectronic oscillator, including the incorporation of a higher finesse, more stable etalon and active phase noise suppression of the RF signal. Two appendices give details on phase noise measurements that incorporate carrier suppression and the noise model for the coupled optoelectronic oscillator.

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We live in an era where the impact of climate change is felt in everyday life, with warming temperatures leading to environmental destruction and unprecedented shifts in natural and anthropic activities. Before these adverse effects can be addressed, it is crucial to explore, monitor, and collect data on the Earth's environment on both the micro- and macro-scale. Additionally, once environmental solutions have been implemented, it is imperative to continue data collection to gauge success. Standing in the way of such exploration and monitoring efforts are the shortcomings and limitations of pervasive communication technologies, namely radio frequency technologies (e.g., WiFi and Bluetooth). In this thesis, we peer beyond the confines of the radio frequency spectrum and explore the use of light — namely visible light, along with its infrared neighbor — to create next-generation communication and sensing systems. To generate highly tunable light, we explicitly turn to lasers. Unlike traditional luminaries, e.g., light-emitting diodes, laser diodes provide superior communication and sensing performance thanks to their GHz modulation speeds, narrow spectral wavelengths, intrinsic polarization, high-power densities, and high electro-optical conversion ratios. In this thesis, we exploit the versatility of laser light to enable micro- and macro-scale exploration and monitoring systems in aquatic, terrestrial, and aerial environments. We begin by exploring the powerful potential of laser light in communication and sensing contexts, then dive into the overarching challenges and techniques needed to realize practical and robust solutions. Armed with our research methodology, we then break through the air-water boundary with laser light and demonstrate two systems supporting bidirectional communication and 3D localization between aerial and underwater robots. Continuing on land and in the air, we next present two systems enabling laser tethering, communication, and wireless power delivery for high-mobility targets. We then complement these micro-scale systems with a macro-scale approach for laser polarization sensing over terrestrial fiber-optic networks. Finally, we conclude by expounding on the remaining challenges associated with laser-based communication and sensing systems, as well as the bright future of laser light in these novel contexts.

This thesis describes a number of studies on organic semiconductors as laser gain media with the aim of simplifying the excitation scheme and exploring potential applications. A hybrid device taking the advantage of high power inorganic light emitting diodes (LEDs) and low threshold organic distributed feedback lasers is demonstrated to realize a LED pumped organic laser. When the drive current is higher than 152 A, a sharp peak is clearly observed in the laser output spectrum, implying the LED successfully pumps the polymer laser above threshold. This is the first time an incoherent LED has been used as the excitation source for an organic semiconductor laser. A strategy for further improving the performance of the hybrid device is explored with the use of a luminescent concentrator made of a dye doped SU8 film, to intensify the power density from the inorganic LED. The luminescent concentrator is capable of increasing the incident power density by a factor of 9 and reducing the lasing threshold density by 4.5 times. As a preliminary investigation towards mode-locked polymer lasers, the impact of a solid state saturable absorber on a solution based organic semiconductor laser is explored. The dye doped polystyrene thin film saturable absorber exhibits a saturation intensity of a few MW/cm². When it is placed into the laser cavity, a train of short pulses is generated and the underlying mechanism is discussed. Finally, the potential of using organic semiconductor lasers in the detection of nitro-aromatic explosive vapours is studied in distributed feedback polyfluorene lasers. A high sensing efficiency and fast response from the laser prove polyfluorene lasers can be used as disposal and low cost devices in explosive chemosensing.

This thesis reports on the development of glass-based femtosecond laser sources around 2 µm wavelength. In order to be able to produce 2 µm radiation the dopants used were trivalent Thulium (Tm³⁺) and trivalent Holmium (Ho³⁺) that could be optically pumped with Ti:Sapphire radiation at 0.8 µm and semiconductor disk lasers (SDL) at 1.2 µm. The samples were produced at Leeds University and polished in-house in bulk form and deployed in free space laser cavities. Tellurite compounds doped with Tm³⁺ produced stable continuous wave 1.94 µm radiation when pumped at 800 nm with a maximum efficiency of 28.4% with respect to the absorbed power and maximum output power around 120 mW when pumped using a Ti:Sapphire operating around 0.8 µm. The radiation was broadly tunable across 130 nm. Tm³⁺-Ho³⁺ doubly doped tellurite samples lased around 2.02 µm with maximum efficiency of 25.9% and with P[subscript(OUT)]=75 mW and a smooth tunability of 125 nm. The fluorogermanate glass doped with Tm³⁺ gave an absorbed to output power efficiency of 50%. The maximum continuous wave output powers obtained were around 190 mW and limited by the available pump power at 0.8 µm. These results together with a very low threshold of 60 mW of incident power were comparable to the crystalline counterparts to this gain medium. The Tm3+ tellurite and the Tm³⁺-Ho³⁺ tellurite compounds were also pumped by an SDL operating at 1215 nm to obtain an indication of the viability of such a pump scheme. The results were a maximum internal slope efficiency of 22.4% with a highest output power of 60 mW. The comparison demonstrated that 1.2 µm pumping was competitive with using 0.8 µm wavelength. The use of semiconductor saturable absorbing mirror (SESAM) technology was used for the modelocking of these lasers. The SESAM was produced in Canada and implanted with As⁺ ions in order to reduce the relaxation time. Trains of transform-limited laser pulses at 222 MHz as short as 410 fs centred at 1.99 µm were produced for the first time with a bulk Tm³⁺:Fluorogermanate glass. The maximum average output power obtained was of 84 mW. The same SESAM deployed on the Tm³⁺-Ho³⁺ Tellurite compounds gave trains of transform-limited pulses as short as 630 fs at 2.01 µm with a repetition rate of 143 MHz and a maximum averaged output power of 43 mW. The regime of propagation obtained was soliton-like and the modelocking was self-starting. The results obtained with bulk glass were very promising and open interesting research pathways within the realm of amorphous bulk gain media.

Excitabilité et structures localisées sont des phénomènes universels qui ont été observés dans une grande variété de systèmes. Chacun des deux phénomènes a des propriétés intéressante pour des applications potentielles, surtout dans l'optique. L'excitabilité est la propriété intrinsèque du neurone, elle décrit sa réponse à une stimulation: pour des stimulations en-dessous d'un certain seuil, le neurone reste dans son état de repos mais quand la stimulation dépasse ce seuil, il émet une impulsion dont la taille ne dépend pas de la force de la stimulation. Les structures localisées dans les systèmes optiques sont des pics de surintensité qui coexistent avec un fond homogène sur la section transversale spatialement étendue d'une cavité laser. Dans cette thèse nous avons étudié l'apparition de ces deux phénomènes non-linéaires dans des microcavités à semi-conducteur, pour lesquelles les applications dans le traitement tout-optique de l'information sont prometteuse. En outre, nous avons étudié la possibilité de trouver un nouveau phénomène à l'intersection entre les deux: les structures localisées excitables. D'une part nous avons étudié les propriétés des structures localisées qui se forment dans un laser à solitons. Celui-ci est constitué par deux laser à semiconducteur à cavité verticale (VCSEL) mutuellement couplées dans une configuration de laser avec absorbant saturable (LSA). Nous observons l'émissions aléatoire et localisée d'impulsions que nous affirmons être la première évidence expérimentale de structures localisées excitables. D'autre part nous avons démontré le comportement excitable d'un laser avec signal injecté par la possibilité de contrôler les impulsions excitable grâce à une perturbation externe appropriée. Nous avons également réalisé des simulations numériques qui montrent l'existence des structures localisées excitables dans un modèle de VCSEL avec absorbant saturable. / Excitability and localized structures are universal phenomena, observed in various systems. Both possess interesting properties for potential applications, especially in optics. Excitability is the intrinsic property of the neuron defining its response to an external stimulus: for a sub-threshold stimulus the neuron stays quiescent; for a super-threshold stimulus, it emits a well-calibrated pulse independent on the strength of the stimulus. Localized structures in optics are bright intensity peaks coexisting with a homogeneous low intensity background. They appear in the transverse section of spatially-extended laser resonators. We study the occurrence of these nonlinear phenomena in semiconductor microcavities since the applications in all-optical processing of information are promising. Moreover we investigate the possibility of a novel kind of localized structure which stands at the intersection of these two phenomena: the excitable localized structures. On the one hand we study the properties of localized structures arising from a cavity soliton laser composed of two mutually coupled broad-area VCSELs in a LSA (Laser with Saturable Absorber) configuration . We report on the observation of a random and localized emission of pulses which we claim to be the first experimental evidence of noise-triggered excitable localized structures whose excitability is induced by inhomogeneities and drift. On the other hand we demonstrate the excitability in an optically injected laser by showing the control of excitable pulses by means of an external perturbation. We also perform numerical simulations which reveal the existence of excitable localized structures in a model of broad area VCSEL with saturable absorber.

This thesis proposes a new method for the generation of continuous spectra with possible applications in optical WDM access networks. This new method would allow the development of a continuum laser type structure with better performances in terms of cost and simplicity compared to the current supercontinuum sources. For this purpose, we have analyzed the possibility of extending the resonant modes of a Fabry-Perot cavity acting only on the design of one of the cavity mirrors. The design of the mirror is generated with a genetic algorithm targeting a desired reflectivity spectrum. An active medium is then added inside the cavity formed with the synthesized mirror and the cavity's emission is simulated below the lasing threshold. The spectra thus obtained are continuous on an interval of 5 to 15 nm.

An efficient simulation technique for calculating the current distribution in a Vertical Cavity Surface Emitting Laser (VCSEL) is proposed and implemented. The technique consists of a hybrid 1D/3D approach to the problem. The 3D aspect of simulation is essential for devices like a photonic crystal VCSEL where the existing 2D simulation techniques are inadequate. The modular approach of the technique is advantageous, as it provides exibility in dealing with device simulations of varying complexity. It also provides a relatively short simulation time, beneficial for exploring a large design parameter space. The box integration technique is used for discretizing the equations and sparse matrix methods are used in solving the matrices. Simulation results and comparisons are provided for various aspects and modules of the simulator. The results for a few sample simulations indicate that the analysis has reasonable agreement with experimental results. The simulation error can be reduced using more accurate models for the active region of the laser.