Graphene has attracted significant research attention for next generation of semiconductor devices due to its high electron mobility and compatibility with planar semiconductor processing. In this dissertation, the influences of Ohmic metals and high dielectric (high-k) constant aluminum oxide (Al2O3) deposition on the structural and electrical properties of multi-layer epitaxial graphene (MLG) grown by graphitization of silicon carbide (SiC) substrates have been investigated. Uniform MLG was successfully grown by sublimation of silicon from epitaxy-ready, Si and C terminated, 6H-SiC wafers in high-vacuum and argon atmosphere. The graphene formation was accompanied by a significant enhancement of Ohmic behavior, and, was found to be sensitive to the temperature ramp-up rate and annealing time. High-resolution transmission electron microscopy (HRTEM) showed that the interface between the metal and SiC remained sharp and free of macroscopic defects even after 30 min, 1430 °C anneals. The impact of high dielectric constant Al2O3 and its deposition by radio frequency (RF) magnetron sputtering on the structural and electrical properties of MLG is discussed. HRTEM analysis confirms that the Al2O3/MLG interface is relatively sharp and that thickness approximation of the MLG using angle resolved X-ray photoelectron spectroscopy (ARXPS) as well as variable-angle spectroscopic ellipsometry (VASE) is accurate. The totality of results indicate that ARXPS can be used as a nondestructive tool to measure the thickness of MLG, and that RF sputtered Al2O3 can be used as a (high-k) constant gate oxide in multilayer grapheme based transistor applications.

Hybrid organic-inorganic perovskites has attracted much attention for its diverse optoelectronic applications. Many studies point out that hybrid organic-inorganic perovskites compounds have superior physical properties that can enable these materials to fabricate good performance solar cells. However, there is a lack of repeatable recipe for the fabrication of perovskite transistors with high mobilities. In this work, a detailed investigation has been conducted on the fabrication of Methylammonium-based perovskite compounds transistors on various polymer substrates. A group of methacrylate-based polymers has been chosen as the materials for gate dielectric layers. Generally, we found that the growth of perovskite crystals highly depends on the hydrophobicity of the substrates. More hydrophobic polymer layers yield larger crystal growth, but suppress the adhesion of perovskites crystals. Aromatic groups in methacrylate-based polymers have hydrophobic properties but it still gives better compact perovskite films with larger crystals. Poly(phenyl methacrylate) (PPhMA) enables the growth of the best perovskite films. The best performance of MAPbI3-xClx perovskite transistors was fabricated on PPhMA with an electron mobility µsat = 4.30 cm2 V−1 s−1 at 150 K. Photothermal deflection spectroscopy was used to investigate the subgap optical absorptions of the perovskite films.

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published_or_final_version / abstract / Electrical and Electronic Engineering / Master / Master of Philosophy

The LAMBDA-DIODE was invented in integrated-circuit form in 1974. There was a proposal about this device's application in memory circuits at that time. This thesis is to evaluate the circuit performance of the COMPLEMENTARY JFET LAMBDA-DIODE SRAM. It investigates the speed, power consumption and chip area of this circuit compared with the JFET CROSS COUPLED SRAM by using SPICE and breadboard simulation techniques. The results show positive signs of the Λ-DIODE's feasibility for use in VLSI static memory circuits from the chip area aspect if the parasitic capacitance of the JFET device could be minimized to reduce the power delay product.

Les applications émergentes dans la gamme des fréquences Térahertz (THz, 10¹² Hz) stimulent le développement des composants actifs et passifs rapides ainsi que des émetteurs et des détecteurs de radiation travaillant dans ce domaine. Les dispositifs actuels ne répondent pas à tous les besoins de l'industrie à cause de la consommation, la taille et le coût très importants. La solution pour la réalisation des émetteurs et des détecteurs peut venir des transistors à ondes plasma que nous avons étudiés. Ce sont les composant à base de HEMT Ill-V exploitants les nouvelles propriétés de transport électronique. Les mesures de ces dispositifs ont montré les possibilités de l'émission et de la détection de la radiation autour de 1 THz, à température basse et ambiante. Une détection résonante avec une fréquence ajustable est possible. D'un autre côté il est nécessaire de réaliser les composants actifs électroniques (transistors) capables de fonctionner aux fréquences proches du THz. Ceci est nécessaire pour la réalisation des circuits rapides comme les amplificateurs, les mélangeurs et autres. Pour répondre à cette demande, nous avons étudié deux types de transistors double-grilles. Les mesures ont prouvé l'amélioration des performances statiques et dynamiques (saturation de courant de drain et courant de drain maximal, efficacité de commande, transconductance et conductance de sortie, fréquences de fonctionnement). De plus, la consommation aux performances équivalentes est plus faible. Les simulations montrent que les performances peuvent être améliorées d'avantage. / The emergent applications in the Terahertz (THz) frequencies range stimulate the development of active and passive rapid devices as much as of emitters and detectors working in this domain. Actually existent devices do not respond to all industry needs because of too high consumption, size and cost, and other inconvenient. A solution for realisation of emitters and detectors could come from plasma-wave transistor that we studied. These devices are based on 1I1-V HEMT and utilised a particular behaviour of electronic transport. Measurements have shown the possibility of emission and detection of radiation at about 1 THz. From the other hand it is necessary to realize electronic active devices (transistors) able to operate near the THz range. This is necessary for realisation of rapid integrated circuits such as amplifiers, mixers and so on. To do this we have chosen to study two kinds of double-gate transistors. Measurements have shown the increasing of static and dynamic performances (maximum drain current and drain current saturation, efficiency of charge control, transconductance, output conductance, operation frequencies). Besides, the same performances can be obtained at lower consumption. Simulations show that performances could be improved even more.

Cette thèse est consacrée à l'étude des détecteurs de radiation THz basés sur des transistors à effet de champ qui ont été fabriqués en utilisant les technologies différentes. La photo-réponse de transistors à effet de champ a été étudiée dans une large gamme d'intensités de radiation: de 0,5 mW/cm2 à 500 kW/cm2, et pour des fréquences allant de 0,13 THz à 3,3 THz. Les détecteurs montrent la photo-réponse linéaire en fonction de l'intensité du rayonnement dans une large gamme d'intensités, jusqu'à plusieurs kW/cm2. Pour toutes les fréquences, nous avons observé que la région linéaire a été suivie par une partie non linéaire et ensuite par une saturation. Cet effet a conduit à un nouveau modèle de détecteurs FET à large bande qui est basé sur la connaissance phénoménologique de caractéristiques statiques de transistor. Le modèle prend en compte le comportement non linéaire du courant dans le canal dans toute une plage de fonctionnement du transistor, ce qui est particulièrement important à des intensités élevées de rayonnement THz. Les données expérimentales ont été interprétées avec succès dans le cadre du modèle développé. / This thesis is devoted to study of terahertz detectors based on field-effect transistors fabricated using silicon technology and they comparison to InGaAs/InP ones. The main research effort was devoted to the problem of detectors linearity at high radiation intensities. The photoresponse of field effect transistors to terahertz radiation in a wide range of intensities: from 0.5 mW/cm2 up to 500 kW/cm2 and for frequencies from 0.13 THz to 3.3 THz was studied. This work shows that the photoresponse of all studied detectors increases linearly with increasing radiation intensity up to a few kW/cm2 range and is followed by the nonlinear and saturation parts for higher radiation intensities. This effect has led to the new model of broadband field-effect transistor detectors. The model is based on the phenomenological knowledge of the transistor static transfer characteristic and explains the photoresponse nonlinearity as related to non-linearity and saturation of the transistor channel current. The developed model explains consistently experimental data both in linear and nonlinear regions of terahertz detection.

Thesis (M. Phil.)--University of Hong Kong, 2006. / Title proper from title frame. Also available in printed format.