There are many advantages to the solution phase synthesis of semiconductor nanowires, the most notable of which are the ease of scalability and the production of nanowires in higher yields than those typically obtained in chemical vapor deposition (CVD) based processes. The solution phase synthesis of high quality, high aspect ratio (>100) narrow diameter semiconductor nanowires depends sensitively on three parameters: the diameter of the nanocrystals utilized to promote (seed) nanowire growth, molecular precursor decomposition kinetics and the choice of solvent in which the nanowires are grown. Bismuth is a low melting point (270 °C) semimetal and thus an ideal candidate for the solution-liquid-solid (SLS) growth of nanowires. A bismuth nanocrystal synthesis was developed that affords nanocrystals with average diameters from 4 - 20 nm. The nanocrystal diameter is controlled by varying the capping ligand (TOPO) to bismuth molar ratio. The synthesis of Au2Bi nanocrystals was also studied as it also affords small diameter (~ 2 nm) nanocrystals that are suitable for SLS nanowire growth. Molecular precursor decomposition kinetics can have a significant impact on nanowire yield and quality. Precursors that decompose too quickly can produce relatively large diameter nanowires, while precursors that decompose too slowly can produce nanowires with a highly tortuous morphology as a result of a high density of crystallographic defects. The choice of molecular precursor for the synthesis of III-V and II-VI nanowires was investigated. The solvent in which nanowires are grown can also have a significant effect on nanowire yield, quality and morphology. Coordinating solvents such as alkylphosphine oxides and alkylamines can interact with the atoms, or atomic complexes, that constitute nanowires and thus mediate the nanowire growth rate. In some instances, for example InAs nanowires grown in TOPO, this interaction can completely quench nanowire growth. This solvent effect has been investigated for the growth of III-V and II-VI nanowires. Solvents can also affect nanowire morphology. Branched ZnSe nanowires, i.e. hybrid nanostructures in which ZnSe nanorods grow epitaxially from the surface of ZnSe nanowires, are synthesized in trioctylamine whereas TOPO suppresses this branched growth. Finally, a mechanism which allows for the synthesis of narrow diameter nanowires seeded by much larger diameter nanocrystals is investigated. Bismuth nanocrystals with an average diameter of ~ 20 nm are utilized to promote the growth of narrow diameter (~ 6 nm) CdSe.₀₈Te.₉₂ nanowires. / text

Widespread commercialization of photovoltaics (PVs) requires both higher power conversion efficiencies and low-cost, high throughput manufacturing. High efficiencies have been achieved in devices made from materials such as CuIn[subscript x]Ga₁₋[subscript x]Se₂ (CIGS). However, processing of these solar cells still requires high temperature and vacuum, driving up cost. A reduction in manufacturing costs can be achieved by utilizing colloidal nanocrystals. Semiconductor nanocrystals can be dispersed in solvents and deposited via simple and scalable methods under ambient conditions to form the absorber layer in low-cost solar cells. Efficiencies of ~3% have been achieved with CIGS nanocrystal PVs, but this must be improved substantially for commercialization. These devices suffer from poor charge transport in the nanocrystal layer. Here, the synthesis of nanowires and their utilization in solar cells was explored as a way to improve charge transport. CuInSe₂ (CIS) nanowires were synthesized via the solution-liquid-solid method. PV devices were fabricated using the nanowires as the light absorbing layer, and were found to exhibit a measureable power output. Earth-abundant materials were also explored, motivated by the material availability concerns associated with CIGS. Pyrite FeS₂ nanocrystals were synthesized via an arrested precipitation reaction to produce phase-pure particles 15 nm in size. These nanocrystals were spray coated to form the active layer in several different common device architectures. These devices failed to produce any power output. The material was determined to be slightly sulfur deficient, leading to a high carrier concentration and metallic behavior in the thin films, with conductivities measured to be ~5 S/nm. A nanocrystal synthesis of Cu₂ZnSnS₄ (CZTS) was also developed to produce highly dispersible crystalline particles ~11 nm in size. These nanocrystals were spray coated onto glass substrates to form the absorber layer in test PV devices, and an efficiency of 0.23% was achieved without high-temperature or chemical post-processing. Additional studies included the synthesis of CZTS nanorods and their incorporation into functioning solar cells. The selenization of CZTS nanocrystal films was also studied as a way to improve solar cell performance. High temperature annealing in a Se atmosphere was found to produce CZTS(Se) layers, which could be used in working PV devices. / text

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Silicon nanocrystals embedded in silicon nitride have received attention as promising materials for optoelectronic applications. More specifically, band gap engineering of novel materials based on silicon nanocrystals has been proposed for possible application in an all-silicon tandem solar cell within the field of `third generation' photovoltaics. Such an application would require nanocrystals to exhibit quantum confinement whereby the optical and electrical properties of a film could be tuned by controlling the size of these `quantum dots'. This thesis investigates the correlation between the structural and optical properties of silicon nanocrystals grown in silicon nitride multilayer structures via solid phase crystallisation, as part of an experimental investigation into quantum confinement. A study of the relevant processing parameters for the solid phase crystallization of silicon nanocrystals in amorphous silicon nitride is presented and the effectiveness of the multilayer approach for controlling nanocrystal size is demonstrated. Structural characterisation using transmission electron microscopy and glancing incidence x-ray diffraction is complemented with a new application of Fourier transform infrared spectroscopy for the detection of silicon nanocrystals. A case study on the effects of annealing temperature on the photoluminescence from silicon nitride multilayers is presented. While a clear correlation between the structural, molecular and optical properties is demonstrated, evidence of quantum confinement remains ambiguous. The investigation into the limits of parameter space for the formation of silicon nanocrystals in silicon nitride multilayers also leads to the formation of a novel Si-Si3N4 nanocomposite material. A comprehensive study of the photoluminescence from silicon nanocrystals embedded in nitride is presented in the context of homogeneous and multilayer nitride films. Size dependent PL and absorption is demonstrated for silicon nitride multilayers with silicon-rich silicon nitride layer thicknesses varying from 1 to 4.5 nm, indicating the formation of quantum wells. These same structures are annealed to form arrays of silicon nanocrystals. Although the PL and absorption spectra suggest quantum effects, inherent ambiguities remain. The findings in this thesis provide greater insight into the nature of confinement and indicate the need for further research if the successful implementation of these structures into an all silicon tandem cell is to be achieved.

Thesis (Ph. D.)--University of Texas at Dallas, 2007. / Includes vita. Includes bibliographical references (leaves 101-105).

Thesis (Ph.D.)--Drexel University, 2008. / Includes abstract and vita. Includes bibliographical references (leaves 154-177).

Thesis (M. Phil.)--University of Hong Kong, 2007. / Title proper from title frame. Also available in printed format.

Thesis (M.S.)--Oregon State University, 2010. / Printout. Includes bibliographical references (leaves 50-53). Also available on the World Wide Web.

Thesis--Auburn University, 2006. / Abstract. Vita. Includes bibliographic references (p.62-68).

Thesis (Ph. D.)--Oregon State University, 2011. / Printout. Includes bibliographical references (leaves 137-146). Also available on the World Wide Web.