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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
Search results
Showing 121 to 130 of 300 (0.012 seconds)| 121 |
Fabrication and Characterization of Hybrid Magnetic Semiconductor Materials and DevicesWong, Ping Kwan Johnny January 2009 (has links)
No description available.
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| 122 |
Hydrogen diffusion and trapping in crystalline siliconGhita, M. January 2010 (has links)
No description available.
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| 123 |
The effects of multiferroic proximity on dilute magnetic semiconductors with reduced dimensionalityMcClure, John Frederick Henry January 2010 (has links)
No description available.
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| 124 |
Structural and optical properties of semiconductor and metal nanoparticlesHayton, James Andrew January 2007 (has links)
No description available.
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| 125 |
The Investigation of Growth Parameters and Characterization of Dilute Nitride SemiconductorsChao, Sheng January 2009 (has links)
No description available.
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| 126 |
Passivated silicon and diamond surfaces : mapping, modification and molecular adsorptionSharp, Peter January 2013 (has links)
The contrasting surface chemistry of passivated and unpassivated Group IV elemental semiconductor surfaces fund amentally affects both their electronic properties and the binding of adsorbates. Partially passivated surfaces offer a way to explore these different environments simultaneously. Control of the surface properties by selective passivation also allows a route to direct the adsorption of atoms and molecules. Herein, we investigate and attempt to manipulate the properties of hydrogen-passivated silicon and diamond surfaces, and subsequently study their interaction with fullerenes. Hydrogen-passivated silicon surfaces have been studied extensively over the past few decades and it is possible to control the passivation of individual silicon atoms via STM hydrogen lithography. Despite this, hardly any work has been done using AFM and there have been no reports of for ce-meditated lithography. We have studied the H:Si(100)(2 x 1) surface with both STM and frequency modulated dynamic AFM. AFM images exhibit both conventional and inverted contrast imaging modes, which we explain in terms of the termination of the probe apex by comparing force spectra to DFT calculations. We also demonstrate hydrogen lithography via voltage pulsing using a Plus sensor.
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Investigation of Dilute Nitride Laser Degradation and Alternative N Sources for MBE Growthof 111- V Dilute Nitride SemiconductorsLu, Weisheng January 2009 (has links)
No description available.
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| 128 |
Coherent phonon processes in semiconductor superlatticesBeardsley, Ryan January 2011 (has links)
No description available.
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| 129 |
Tunneling and Optical Spectroscopy of p-i-n Resonant Tunneling Diodes containing Ferromganetic GA1-xMnxAsThomas, Oliver January 2009 (has links)
No description available.
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| 130 |
Evaluation of the thermoelectric performance of heavily doped n-pbTeAl-Masri, Z. H. D. January 1991 (has links)
No description available.
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