Copper oxide with various morphologies, such as nanocubes, nanorods, and nanoribbons was synthesized from the H2O/C2H5OH solution of Cu(OAc)2/NEt3 with or without tetraoctylammonium bromide (TOAB) under mild conditions. In the system of Cu(OAc)2/NEt3 (0.05 mmole : 7.9 mmole) with 0.75 mmole of TOAB in H2O/C2H5OH (10 mL : 40 mL) solution, We found that nanocubes of CuO spontaneously self-assembled into nanorods and then nanosheets with the increasing of reaction time. Structural characterization of the CuO nanorods shows that the rod grows primarily along the [010] direction. Nanorods of CuO were also characterized by TEM, HR-TEM, SAED, and XRD.

Current requirements of nonvolatile memory (NVM) are the high density cells, low-power consumption, high-speed operation and good reliability for the scaling down devices. However, all of the charges stored in the floating gate will leak into the substrate if the tunnel oxide has a leakage path in the conventional NVM during endurance test. Therefore, the tunnel oxide thickness is difficult to scale down in terms of charge retention and endurance characteristics. The nonvolatile nanocrystal memories are one of promising candidates to substitute for conventional floating gate memory, because the discrete storage nodes as the charge storage media have been effectively improve data retention under endurance test for the scaling down device. Many methods have been developed recently for the formation of nanocrystal. Generally, most methods need thermal treatment with high temperature and long duration. This procedure will influence thermal budget and throughput in current manufacture technology of semiconductor industry. In this thesis, we used the three kind of high-k dielectric structure as the tunnel oxide (Al2O3, HfO2/Al2O3/HfO2, Al2O3/HfO2/Al2O3) to overcome the limitation of conventional NVMs during the scaling down process. First, we used Al2O3 as tunnel oxide. It observed that device of Al2O3 as tunnel oxide reduce equivalent thickness without lost retention too much. Then, we used HfO2/Al2O3/HfO2 as tunnel oxide. It observed the device of HfO2/Al2O3/HfO2 as tunnel oxide which had bigger window than the device used thermal oxide as tunnel oxide. Moreover it had better retention characteristics than the device used thermal oxide as tunnel oxide with a small charge lose rate. And it reduced equivalent thickness of SiO2.Final, we used Al2O3/HfO2/Al2O3 as tunnel oxide. It observed the device of Al2O3/HfO2/Al2O3 as tunnel oxide which had better retention characteristics than the device used HfO2/Al2O3/HfO2 as tunnel oxide without decrease the electron and hole injection. And we reduce equivalent thickness of SiO2 .

Thesis (M. Med. Sc.)--University of Hong Kong, 2001. / Includes bibliographical references (leaves 53-67).

Thesis (M.S.)--University of Florida, 2006. / Title from title page of source document. Document formatted into pages; contains 61 pages. Includes vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Canterbury, 2009. / Typescript (photocopy). Includes bibliographical references (p. 241-266). Also available via the World Wide Web.

Thesis (M.S.)--Tennessee Technological University, 2009. / Title from title page screen (viewed on Feb. 5, 2010). Bibliography: leaves 93-100.

Thesis (Ph. D.)--University of Texas at Austin, 2003. / Supervisors: Sanjay K. Banerjee and Amitabh Jain. Vita. Includes bibliographical references. Available also from UMI Company.

Thesis (M. Phil.)--University of Hong Kong, 2001. / Includes bibliographical references (leaves 113-129).

Thesis--M. Phil., University of Hong Kong, 1984.

Thesis (Ph. D.)--University of Queensland, 2002. / Includes bibliographical references.